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    Text: N AMER PHILIPS/DISCRETE ObE D • bb53T31 01SE7ci 1 ■ RZB12050Y -r -5 3 -1 3 J PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor intended for use in a common-base, class-C narrowband amplifier operating under pulsed conditions.


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    PDF bb53T31 01SE7c RZB12050Y