Untitled
Abstract: No abstract text available
Text: HRB0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0047-0200Z Rev.2.00 Sep.01.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.
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HRB0502A
REJ03G0047-0200Z
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1SS106
Abstract: 1ss106 application note ADE-208-153A 1SS106 diode REJ03G0125-0200Z
Text: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z Previous: ADE-208-153A Rev.2.00 Oct.23.2003 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
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1SS106
REJ03G0125-0200Z
ADE-208-153A)
DO-35
1SS106
1ss106 application note
ADE-208-153A
1SS106 diode
REJ03G0125-0200Z
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HAT1069C
Abstract: RENESAS E4
Text: HAT1069C Silicon P Channel Power MOS FET Power Switching REJ03G0164-0200Z Rev.2.00 Dec.04.2003 Features • Low on-resistance RDS on = 38 mΩ typ (at VGS = –4.5 V) • High speed switching • Capable of 1.8 V gate drive • High density mounting Outline
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HAT1069C
REJ03G0164-0200Z
HAT1069C
RENESAS E4
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transistor tt 2170
Abstract: hudi HD64F2170 Nippon capacitors
Text: REJ09B0149-0200Z The revision list can be viewed directly by cliking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2172Group Hardware Manual
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REJ09B0149-0200Z
H8S/2172Group
16-Bit
Family/H8S/2100
H8S/2170
HD64F2170
D-85622
H8S/2172
transistor tt 2170
hudi
HD64F2170
Nippon capacitors
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HAT2200R-EL-E
Abstract: HAT2200R-EL HAT2200R
Text: HAT2200R Silicon N Channel Power MOS FET Power Switching REJ03G0232-0200Z Rev.2.00 Apr.05.2004 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 22 mΩ typ. (at VGS = 10 V) Outline SOP-8
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HAT2200R
REJ03G0232-0200Z
HAT2200R-EL-E
HAT2200R-EL
HAT2200R
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TLP 433 module
Abstract: function generator 566 IC 566 function generator F380 Nippon capacitors
Text: REJ09B0093-0200Z The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8/38076R Group Hardware Manual
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REJ09B0093-0200Z
H8/38076R
16-Bit
H8/300H
H8/38076RF
H8/38076R
H8/38075R
H8/38074R
H8/38073R
D-85622
TLP 433 module
function generator 566
IC 566 function generator
F380
Nippon capacitors
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2SC5624
Abstract: No abstract text available
Text: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0200Z Previous ADE-208-978(Z Rev.2.00 Oct.21.2003 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz
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2SC5624
REJ03G0129-0200Z
ADE-208-978
2SC5624
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HAT2197R
Abstract: HAT2197R-EL-E
Text: HAT2197R Silicon N Channel Power MOS FET Power Switching REJ03G0061-0200Z Rev.2.00 Apr.02.2004 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.3 mΩ typ. (at VGS = 10 V)
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HAT2197R
REJ03G0061-0200Z
HAT2197R
HAT2197R-EL-E
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hz2all
Abstract: hz2lla str 380
Text: HZ-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise REJ03G0183-0200Z Previous: ADE-208-119A Rev.2.00 Mar.11.2004 Features • Vz-Iz characteristics are semi logarithmic linear from IZ = 1nA to 1mA and have sharper breakdown knees in a low
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REJ03G0183-0200Z
ADE-208-119A)
DO-35
hz2all
hz2lla
str 380
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M34524EDFP
Abstract: M34524M8-XXXFP M34524MC-XXXFP 00FF EMR01
Text: REJ09B0107-0200Z 4524 Group 4 User's Manual RENESAS 4-BIT CISC SINGLE-CHIP MICROCOMPUTER 720 FAMILY / 4500 SERIES Before using this material, please visit our website to confirm that this is the most current document available. Rev. 2.00 Revision date: Aug 06, 2004
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REJ09B0107-0200Z
M34524EDFP
M34524M8-XXXFP
M34524MC-XXXFP
00FF
EMR01
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ram repair
Abstract: 10P6S M306NAMCT M306NB m60081L m306na IC61-1004-051 PC4701
Text: M306NAT2-RPD-E Emulation Pod for M16C/6N Group M306NA and M306NB User's Manual Rev.2.00 July 1, 2004 REJ10J0202-0200Z • IC61-1004-051 is a product of Yamaichi Electronics Co., Ltd. • NQPACK, YQPACK, YQSOCKET, YQ-Guide, HQPACK, TQPACK and TQSOCKET are products of Tokyo Eletech Corporation.
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M306NAT2-RPD-E
M16C/6N
M306NA
M306NB
REJ10J0202-0200Z
IC61-1004-051
M306NAT2-RPD-E
ram repair
10P6S
M306NAMCT
M306NB
m60081L
PC4701
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MARK COLOR CODE
Abstract: zener diodes color coded HSK122
Text: HZK-LL Series Silicon Epitaxial Planar Zener Diodes for Hard Knee Low Noise REJ03G0020-0200Z Previous: ADE-208-128A Rev.2.00 May.14.2003 Features • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners).
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REJ03G0020-0200Z
ADE-208-128A)
MARK COLOR CODE
zener diodes color coded
HSK122
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H5N2305PF
Abstract: H5N2305PF-E
Text: H5N2305PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0026-0200Z Rev.2.00 Jun.25.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3PFM D G 1 S Rev.2.00, Jun.25.2004, page 1 of 9 2 3 1. Gate 2. Drain
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H5N2305PF
REJ03G0026-0200Z
H5N2305PF
H5N2305PF-E
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HM62V16100LTI-5
Abstract: HM62V16100I HM62V16100LBPI-4 HM62V16100LBPI-4SL HM62V16100LBPI-5SL HM62V16100LTI-4 HM62V16100LTI-4SL HM62V16100LTI-5SL
Text: HM62V16100I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit REJ03C0060-0200Z Rev. 2.00 Oct.06.2003 Description The HM62V16100I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. HM62V16100I Series has realized higher density, higher performance and low power consumption by employing CMOS process
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HM62V16100I
16-bit)
REJ03C0060-0200Z
16-Mbit
16-bit.
48-bump
48-pin
HM62V16100LTI-5
HM62V16100LBPI-4
HM62V16100LBPI-4SL
HM62V16100LBPI-5SL
HM62V16100LTI-4
HM62V16100LTI-4SL
HM62V16100LTI-5SL
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Untitled
Abstract: No abstract text available
Text: HD74ALVCH162831 1-bit 4-bit Address Register / Driver with 3-state Outputs REJ03D0039-0200Z Previous ADE-205-195(Z Rev.2.00 Oct.02.2003 Description This 1-bit to 4-bit address register / driver is designed for 2.3 V to 3.6 V VCC operation. The device is ideal
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HD74ALVCH162831
REJ03D0039-0200Z
ADE-205-195
HD74ALVCH162831
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HRU0103A
Abstract: No abstract text available
Text: HRU0103A Silicon Schottky Barrier Diode for Rectifying REJ03G0149-0200Z Previous: ADE-208-450A Rev.2.00 Nov.26.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
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HRU0103A
REJ03G0149-0200Z
ADE-208-450A)
HRU0103A
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Untitled
Abstract: No abstract text available
Text: HVU350B Variable Capacitance Diode for VCO REJ03G0080-0200Z Previous: ADE-208-430A Rev.2.00 Sep.17.2003 Features • High capacitance ratio. (n = 2.8 min) • Low series resistance. (rs = 0.5 Ω max) • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design.
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HVU350B
REJ03G0080-0200Z
ADE-208-430A)
HVU350B
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M30622F8PGP
Abstract: M30622MEP-XXXGP M30622F8PFP M30620FCPFP
Text: M16C/62 Group M16C/62P, M16C/62PT SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0001-0200Z Rev.2.00 Oct. 29, 2003 1. Overview The M16C/62 group (M16C/62P, M16C/62PT) of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin,
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M16C/62
M16C/62P,
M16C/62PT)
16-BIT
REJ03B0001-0200Z
M16C/60
80-pin,
M30622F8PGP
M30622MEP-XXXGP
M30622F8PFP
M30620FCPFP
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Untitled
Abstract: No abstract text available
Text: HSC276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0134-0200Z Previous: ADE-208-421A Rev.2.00 Nov.10.2003 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information
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HSC276
REJ03G0134-0200Z
ADE-208-421A)
HSC276
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HD74ALVCHS162830
Abstract: No abstract text available
Text: HD74ALVCHS162830 1-bit to 2-bit Address Driver with 3-state Outputs REJ03D0029-0200Z Previous ADE-205-221(Z Rev.2.00 Oct.02.2003 Description This 1-bit to 2-bit address driver is designed for 2.3 V to 3.6 V VCC operation. To ensure the high impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the
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HD74ALVCHS162830
REJ03D0029-0200Z
ADE-205-221
HD74ALVCHS162830
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2SK3391
Abstract: 2SK3391JX
Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0200Z Previous ADE-208-847 (Z Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting
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2SK3391
REJ03G0209-0200Z
ADE-208-847
2SK3391
2SK3391JX
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Untitled
Abstract: No abstract text available
Text: M61110FP/GP Coil-less VIF/SIF REJ03F0021-0200Z Rev.2.0 Mar.12.2004 Description M61110FP is a semiconductor integrated circuit consisting of VIF/SIF signal processing for CTVs and VCRs. M61110FP provides low cost and high performance system with the coil-less AFT
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M61110FP/GP
REJ03F0021-0200Z
M61110FP
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lts 542 pin diagram
Abstract: CHN 804 diode chn 537 CHN 703 chn 739 lts 542 lts 543 pin configuration lts 543 pin diagram u18 hall ADE-702-230
Text: REJ09B0023-0200Z The revision list can be viewed directly by cliking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. SH7641 32 Hardware Manual Renesas 32-Bit RISC Microcomputer
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REJ09B0023-0200Z
SH7641
32-Bit
SH7641
HD6417641
D-85622
lts 542 pin diagram
CHN 804 diode
chn 537
CHN 703
chn 739
lts 542
lts 543 pin configuration
lts 543 pin diagram
u18 hall
ADE-702-230
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HRB0502A
Abstract: No abstract text available
Text: HRB0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0047-0200Z Rev.2.00 Sep.01.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.
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HRB0502A
REJ03G0047-0200Z
HRB0502A
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