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    2SK3391JX Search Results

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    2SK3391JX Price and Stock

    Rochester Electronics LLC 2SK3391JX

    RF MOSFET 13.7V UPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3391JX Bulk 86
    • 1 -
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    • 100 $3.52
    • 1000 $3.52
    • 10000 $3.52
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    Bristol Electronics 2SK3391JX01UL 7,088 2
    • 1 -
    • 10 $2.184
    • 100 $1.5681
    • 1000 $1.3776
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    Quest Components 2SK3391JX01UL 5,670
    • 1 $4.5
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
    • 10000 $1.575
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    Renesas Electronics Corporation 2SK3391JX

    2SK3391 - RF Power Field-Effect Transistor, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK3391JX 134,038 1
    • 1 $3.38
    • 10 $3.38
    • 100 $3.18
    • 1000 $2.87
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    2SK3391JX Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3391JX Renesas Technology Original PDF
    2SK3391JXTL Renesas Technology RF FETs, Discrete Semiconductor Products, MOSFET N-CH 17V 300MA UPAK Original PDF
    2SK3391JXTL-E Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF

    2SK3391JX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original
    2SK3391 REJ03G0209-0300 PLZZ0004CA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    2SK3391

    Abstract: 2SK3391JX
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0200Z Previous ADE-208-847 (Z Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting


    Original
    2SK3391 REJ03G0209-0200Z ADE-208-847 2SK3391 2SK3391JX PDF

    2SK3391

    Abstract: 2SK3391JXTL-E on 543 upak 319 0048 0 00 440
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original
    2SK3391 REJ03G0209-0300 PLZZ0004CA-A 2SK3391 2SK3391JXTL-E on 543 upak 319 0048 0 00 440 PDF

    2SK3391

    Abstract: 2SK3391JXTL-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF