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    Catalog Datasheet MFG & Type Document Tags PDF

    DD880

    Abstract: No abstract text available
    Text: ÛÔD D • 023ShOS a01Mb2H 1 « S I E G 88D 14624 D BUZ 48 SIEMENS AKTIENfiESELLSCHAF Main ratings N-Channel = 500 V Draln-source voltage K>s = 7,8 A Continuous drain current 4 Drain-source on-resistance ^DS on = 0,6 n Description Case Type SIPMOS, N-channel, enhancement mode


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    023ShOS a01Mb2H C67078-A1605-A2 curre50 fl23SbOS a235bOS DD880 PDF

    DIODE C06 15

    Abstract: C67078-A1605-A2 diode c02
    Text: ÛÔD D • 023ShOS a01Mb2H 1 « S I E G 88D 14624 D BUZ 48 SIEMENS AKTIENfiESELLSCHAF Main ratings N-Channel Draln-source voltage Continuous drain current Drain-source on-resistance Description Case Type K>s 4, ^D S on = 500 V = 7,8 A = 0,6 n SIPMOS, N-channel, enhancement mode


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    023ShOS a01Mb2H r-37-^ C67078-A1605-A2 DIODE C06 15 C67078-A1605-A2 diode c02 PDF

    MMIC SOT 143 marking CODE 77

    Abstract: MMIC marking 77 CGY50 Q68000-A8370 MMIC marking code U MARKING SOT-143 C5
    Text: SIEMENS GaAs MMIC CG Y 50 D a t a s h e e t * Single-stage monolithic microwave 1C MMICam plifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz


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    VPS05175 Q68000-A8370 OT-143 MMIC SOT 143 marking CODE 77 MMIC marking 77 CGY50 Q68000-A8370 MMIC marking code U MARKING SOT-143 C5 PDF

    transistor d325

    Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
    Text: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector


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    053SbOS 00043L3 433/BD 435/BD 437/BD 439/BD 441/BD fl23Sfc ---0436r BD433. transistor d325 TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285 PDF

    74ls244 latch ic

    Abstract: mpd 1026 night-vision digital goggle MIL-D-87157 2S48 74LS244 74LS245 MPD2547 TF444
    Text: SIEMENS AKTIENGE S E LL S C H A F SI E M ENS 47E D • ÔS35b05 DDSb'ifiô D « S I E G MPD 2545T:41'57 GREEN MPD 2547 YELLOW MPD 2548 HIGH EFFICIENCY RED .25" 4-Character, 5x7 Dot Matrix, X-Y Stackable, HI-REL/Military Alphanumeric Programmable Display


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    S35b05 MIL-D-87157 96-Character STD-883 74ls244 latch ic mpd 1026 night-vision digital goggle 2S48 74LS244 74LS245 MPD2547 TF444 PDF

    Untitled

    Abstract: No abstract text available
    Text: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS A K T IENG ES EL LS CH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description SIPMOS, N-channel, enhancement mode


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    fl23SbOS C67078-A1011-A2 fi23Sfc fl235b05 BU22S PDF

    TRANSISTOR BC 137

    Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
    Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case


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    23SbG5 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B TRANSISTOR BC 137 BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 • High D C current gain • High collector current • Collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) S M B T A 13 S M B T A 14


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    Q68000-A6475 Q68000-A6476 OT-23 S3St05 PDF

    PMB2307

    Abstract: No abstract text available
    Text: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current


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    2307R 65-MHz PMB2307 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BL/BJL/BZL-60/-70 Advanced Inform ation • 262 144 words by 4-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60


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    514256B/BJ/BZ-60/-70/-80 514256BL/BJL/BZL-60/-70 514256B/BL-60) 514256B/BL-70) 514256B-80) PDF

    Untitled

    Abstract: No abstract text available
    Text: Ö235b05 QGD4440 7 « S I E Û SSC D PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04440 7 "- l l - z ! BDX27 BDX28 D - BDX 29 BDX 30 BDX 27, BDX 28, BDX 29, and BDX 30 are epitaxial PNP silicon power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


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    235b05 QGD4440 BDX27 BDX28 Q62702-D162 Q62702-D162-V6 Q62702-D162-V10 Q62702-D162-V16 Q62702-D159 Q62702-D159-V6 PDF

    AF106

    Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
    Text: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72


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    023SbOS GGGHG47 AF106 AKTIEN6ESELLSCHAF25C AF106 AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Mixer/Amplifier PMB 2333 Bipolar IC Preliminary Specification •- Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Small outline T-SSOP 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver


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    25GHz 12dBm T-SSOP-16 fl235b05 fi23StiQS A23SbD5 PDF

    MPD2547

    Abstract: mil std 883 latched drivers
    Text: SIEMENS AKTIENGESELLS CHA F SI E M ENS 47E D • ÔS35b05 DDSb'ifiô D « S I E G MPD 2545T:41'57 GREEN MPD 2547 YELLOW MPD 2548 HIGH EFFICIENCY RED .25" 4-Character, 5x7 Dot Matrix, X-Y Stackable, HI-REL/Military Alphanumeric Programmable Display with Built-In CMOS Control Functions


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    S35b05 2545T MIL-D-87157 96-Character STD-883 MPD2547 mil std 883 latched drivers PDF