Untitled
Abstract: No abstract text available
Text: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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Original
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VND810PEP-E
160mW
PowerSSO-12
2002/95/EC
VND810PEP-E
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PDF
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C4858
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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Original
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NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
C4858
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PDF
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10858
Abstract: Powersso-12
Text: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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Original
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VND810PEP-E
VND810PEP-E
160mW
PowerSSO-12
2002/95/EC
10858
Powersso-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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Original
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VND810PEP-E
160mW
PowerSSO-12
2002/95/EC
VND810PEP-E
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PDF
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NAND01G-A
Abstract: NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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Original
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
WSOP48
nand TSOP48
SE5055
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PDF
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ST9036
Abstract: ST90R30 ST90R50 ST72311B Alternative st90t36 ST90T40 ST72F324 ST72F63BK4 ST52T440
Text: PRODUCT TERMINATION NOTICE PTN CMG-MCD/04/841 Old technologies termination from Rousset Fab 2004/12/6 PTN CMG-MCD/04/841 Product s terminated see attached list Reason for termination Rousset 6" Fab closure Rational for termination Rationalisation of low-running devices due
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Original
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CMG-MCD/04/841
03-Dec-2004
ST9036
ST90R30
ST90R50
ST72311B
Alternative
st90t36
ST90T40
ST72F324
ST72F63BK4
ST52T440
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PDF
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A0-A21
Abstract: J-STD-020B M30W0R6500T0 LFBGA88 AI08599
Text: M30W0R6500T0 96 Mbit 64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories 1.8V Supply, Multi-Chip Package FEATURES SUMMARY • ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Flash Memory SUPPLY VOLTAGE
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Original
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M30W0R6500T0
8810h
8814h
54MHz
A0-A21
J-STD-020B
M30W0R6500T0
LFBGA88
AI08599
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PDF
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Untitled
Abstract: No abstract text available
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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Original
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
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PDF
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smd transistor j210
Abstract: SMD R220 transistor j210 J205 J206 TS615 TS616
Text: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5nV/√Hz ■ High output current: 420mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420V/µs ■ -3dB bandwidth: 40MHz @ gain = 12dB on
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Original
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TS616
420mA
40MHz
smd transistor j210
SMD R220
transistor j210
J205
J206
TS615
TS616
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PDF
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CR10
Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0
Text: M30L0R7000T0 M30L0R7000B0 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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Original
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M30L0R7000T0
M30L0R7000B0
54MHz
CR10
J-STD-020B
M30L0R7000B0
M30L0R7000T0
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PDF
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ISO7637
Abstract: JESD97 VND810PEP-E VND810PEPTR-E VNQ810PEP-E Powersso-12
Text: VND810PEP-E Double channel high side driver Features Type RDS on IOUT VCC VNQ810PEP-E 160mΩ(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection
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Original
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VND810PEP-E
VNQ810PEP-E
PowerSSO-12
2002/95/EC
VND810PEP-E
ISO7637
JESD97
VND810PEPTR-E
VNQ810PEP-E
Powersso-12
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PDF
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fbga63 package
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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Original
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NAND128-A
NAND256-A
128-Mbit
256-Mbit
528-byte/264-word
32-Mbit
fbga63 package
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PDF
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AI09
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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Original
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NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
AI09
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PDF
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st nand
Abstract: FBGA63
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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Original
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
TSOP48
USOP48
st nand
FBGA63
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PDF
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USOP48
Abstract: NAND512-A STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 SLC ball 128 mcp IBIS Models TSOP48 outline NAND01G-A NAND128-A NAND128W3A
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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Original
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
USOP48
NAND512-A
STMicroelectronics NAND256W3A
FLASH 512Mb 1.8V VFBGA63 SLC
ball 128 mcp
IBIS Models
TSOP48 outline
NAND01G-A
NAND128-A
NAND128W3A
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PDF
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Untitled
Abstract: No abstract text available
Text: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5nV/√Hz ■ High output current: 420mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420V/µs ■ -3dB bandwidth: 40MHz @ gain = 12dB on
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Original
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TS616
420mA
40MHz
TS616
410mA.
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PDF
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TFBGA55
Abstract: NAND512-A bga 6x8 Package NAND01G-A NAND128-A NAND256-A VFBGA63
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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Original
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
TFBGA55
NAND512-A
bga 6x8 Package
NAND01G-A
NAND128-A
NAND256-A
VFBGA63
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PDF
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smd transistor j210
Abstract: SMD R220 J303 transistor j210 F2230 J207 J210 smd marking f2 J205 J206
Text: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5 nV/√Hz ■ High output current: 420 mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420 V/µs ■ -3dB bandwidth: 40 MHz @ gain = 12 dB on
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Original
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TS616
smd transistor j210
SMD R220
J303
transistor j210
F2230
J207
J210
smd marking f2
J205
J206
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PDF
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW ING EL IS UNPUBLI SHED. COPYRI GHT - R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R ON I C S CORPORATI ON. ALL R I GHT S LOC R E V 1S I O N S D I ST RES ERVE D. p LTR D E S C R 1PTI ON DATE DWN APVD A EH 10 - 0 4 7 8 - 0 4 03DEC2004
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OCR Scan
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03DEC2004
18JAN2005
UL94-V0
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PDF
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