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    HZG336

    Abstract: PHN103T 03ac29
    Text: PHN103T N-channel enhancement mode field-effect transistor Rev. 02 — 28 April 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features • TrenchMOS™ technology


    Original
    PHN103T HZG336 PHN103T 03ac29 PDF

    03ac29

    Abstract: HZG336 MS-012AA PHN103T
    Text: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .


    Original
    PHN103T PHN103T OT96-1 OT96-1, 03ac29 HZG336 MS-012AA PDF

    BS-P0303

    Abstract: Royal Electronics DATASHEET BSP030 BSP030 HZG336 SC-73 03ac29
    Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.


    Original
    BSP030 BSP030 OT223. OT223, BS-P0303 Royal Electronics DATASHEET BSP030 HZG336 SC-73 03ac29 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.


    Original
    BSP030 BSP030 OT223. OT223, PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.


    Original
    BSP030 BSP030 OT223. OT223, PDF