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    03N03LB Search Results

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    03N03LB Price and Stock

    Infineon Technologies AG IPB03N03LB-G

    MOSFET N-CH 30V 80A D2PAK
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    DigiKey IPB03N03LB-G Digi-Reel 787 1
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    IPB03N03LB-G Cut Tape 787 1
    • 1 $1.6
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    IPB03N03LB-G Reel
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    Infineon Technologies AG IPB03N03LB

    MOSFET N-CH 30V 80A D2PAK
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    Infineon Technologies AG IPD03N03LB-G

    MOSFET N-CH 30V 90A TO252-3
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    IPD03N03LB-G Reel
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    IPD03N03LB-G Digi-Reel 1
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    Infineon Technologies AG IPP03N03LB-G

    MOSFET N-CH 30V 80A TO220-3
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    Infineon Technologies AG IPD03N03LB G

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    Bristol Electronics IPD03N03LB G 50
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    03N03LB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IPP03N03LB

    Abstract: JESD22
    Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPP03N03LB PG-TO220-3-1 03N03LB JESD22 PDF

    03N03LB

    Abstract: MARKING d45
    Text: OptiMOS 2 Power-Transistor 03N03LB G 03N03LB G 03N03LB G 03N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level


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    IPD03N03LB IPU03N03LB IPS03N03LB IPF03N03LB PG-TO252-3-11 Q67042-S4260 03N03LB MARKING d45 PDF

    03N03LB

    Abstract: No abstract text available
    Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPP03N03LB PG-TO220-3-1 03N03LB 03N03LB PDF

    IPB03N03LB

    Abstract: JESD22 03N03LB
    Text: 03N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 2.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPB03N03LB PG-TO263-3 PG-TO220-3-1 P-TO263-3 03N03LB IPB03N03LB JESD22 03N03LB PDF

    IPP03N03LB

    Abstract: JESD22 C3320
    Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPP03N03LB PG-TO220-3-1 03N03LB JESD22 C3320 PDF

    Untitled

    Abstract: No abstract text available
    Text: Type 03N03LB G OptiMOS 2 Power-Transistor 03N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPD03N03LB IPS03N03LB PG-TO252-3-11 PG-TO251-3-11 03N03LB PDF

    Q67045-A5078

    Abstract: 03N03LB
    Text: 03N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 2.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPB03N03LB P-TO263-3 PG-TO220-3-1 P-TO263-3 Q67045-A5078 03N03LB Q67045-A5078 03N03LB PDF

    03N03LB

    Abstract: No abstract text available
    Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPP03N03LB PG-TO220-3-1 Q67045-A5077 03N03LB 03N03LB PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    IPD03N03LB

    Abstract: JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4260
    Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPD03N03LB PG-TO252-3-11 P-TO252-3-11 Q67042-S4260 03N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4260 PDF

    03N03LB

    Abstract: IPD03N03LB JESD22 PG-TO252-3-11 03n03l
    Text: Type 03N03LB G OptiMOS 2 Power-Transistor 03N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPD03N03LB IPS03N03LB PG-TO252-3-11 PG-TO251-3-11 03N03LB 03N03LB JESD22 PG-TO252-3-11 03n03l PDF

    Untitled

    Abstract: No abstract text available
    Text: Type 03N03LB G OptiMOS 2 Power-Transistor 03N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPD03N03LB IPS03N03LB PG-TO252-3-11 03N03LB PG-TO251-3-11 PDF