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    03N60 Search Results

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    03N60 Price and Stock

    Rochester Electronics LLC SPP03N60C3XKSA1

    MOSFET N-CH 600V 3.2A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP03N60C3XKSA1 Tube 337,118 799
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    • 1000 $0.38
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    Rochester Electronics LLC NDF03N60ZH

    MOSFET N-CH 600V 3.1A TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDF03N60ZH Tube 56,400 1,110
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    • 10000 $0.27
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    Rochester Electronics LLC SPP03N60S5XKSA1

    MOSFET N-CH 600V 3.2A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP03N60S5XKSA1 Tube 52,560 495
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    Rochester Electronics LLC NDD03N60Z-1G

    MOSFET N-CH 600V 2.6A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDD03N60Z-1G Tube 43,072 1,480
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    Infineon Technologies AG SPD03N60C3ATMA1

    MOSFET N-CH 600V 3.2A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD03N60C3ATMA1 Cut Tape 17,260 1
    • 1 $1.94
    • 10 $1.236
    • 100 $1.94
    • 1000 $0.60742
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    SPD03N60C3ATMA1 Digi-Reel 17,260 1
    • 1 $1.94
    • 10 $1.236
    • 100 $1.94
    • 1000 $0.60742
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    SPD03N60C3ATMA1 Reel 15,000 2,500
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    Avnet Americas SPD03N60C3ATMA1 Reel 15 Weeks 2,500
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    • 10000 $0.36073
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    Mouser Electronics SPD03N60C3ATMA1 2,430
    • 1 $1.41
    • 10 $1.06
    • 100 $0.743
    • 1000 $0.559
    • 10000 $0.523
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    Rochester Electronics SPD03N60C3ATMA1 54 1
    • 1 $0.5819
    • 10 $0.5819
    • 100 $0.547
    • 1000 $0.4946
    • 10000 $0.4946
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    EBV Elektronik SPD03N60C3ATMA1 16 Weeks 2,500
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    Find more 03N60 price and stock on Findchips.com

    03N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HVR-1X 7 diode

    Abstract: HV9805 HVR-1X 2 diode HVR-1X 6 diode
    Text: Supertex inc. HV9805 High Voltage LED Driver General Description The HV9805 driver IC is targeted at driving high voltage LED strings from mains. High voltage LED strings offer an inherent cost advantage with respect to cooling and optics. A boundary mode boost


    Original     		PDF HV9805 HV9805 DSFP-HV9805 NR022614 HVR-1X 7 diode HVR-1X 2 diode HVR-1X 6 diode

    03N60C3

    Abstract: SPD03N60C3
    Text: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 SPD03N60C3

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: 03N60S5 03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 SPP03N60S5 P-TO220-3-1 P-TO263-3-2 03N60S5 Q67040-S4184 03N60S5 Q67040-S4184 SPB03N60S5

    FMD03N60G

    Abstract: 03n60 on semiconductor marking code dpack Diode SMD SJ 28
    Text: DATE DRAWN Oct.-27-'05 CHECKED Oct.-27 -'05 CHECKED Oct .-27 -'05 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original     		PDF MS5F06391 October-27 FMU03N60G FMD03N60G H04-004-05 H04-004-03 FMD03N60G 03n60 on semiconductor marking code dpack Diode SMD SJ 28

    03n60s5

    Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252. PG-TO251. SPD03N60S5 Q67040-S4227 Q67040-S4187 03n60s5

    P-TO263-3-2

    Abstract: No abstract text available
    Text: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB03N60S5 P-TO263-3-2 03N60S5 SPB03N60S5 Q67040-S4197 P-TO263-3-2

    03N60

    Abstract: SPB03N60S5
    Text: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB03N60S5 PG-TO263 03N60S5 SPB03N60S5 Q67040-S4197 03N60

    Untitled

    Abstract: No abstract text available
    Text: 03N60C3 03N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated R DS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A • High peak current capability


    Original     		PDF SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4401 Q67040-S4391

    transistor smd 6.z

    Abstract: SPN03N60S5
    Text: 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 transistor smd 6.z SPN03N60S5

    Untitled

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197

    03n60

    Abstract: 03n60c3
    Text: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4421 03N60C3 03n60

    Untitled

    Abstract: No abstract text available
    Text: 03N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors


    Original     		PDF SPN03N60S5 VPS05163 SPN03N60S5 OT-223 03N60S5 Q67040-S4203

    03N60C3

    Abstract: SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n
    Text: Final data 03N60C3, 03N60C3 03N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 03N60C3 SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2

    03n60s5

    Abstract: transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5
    Text: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5 03n60s5 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5

    SPPX4N60S5

    Abstract: 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: 03N60S5 03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 SPPx4N60S5/SPBx4N60S5 Q67040-S4184 03N60S5 SPPX4N60S5 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5

    03N60C3

    Abstract: SPP03N60C3 SDP06S60 SPB03N60C3
    Text: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4401 03N60C3 03N60C3 SPP03N60C3 SDP06S60 SPB03N60C3

    SPN03N60S5

    Abstract: No abstract text available
    Text: 03N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax 650 V • Optimized capacitances RDS on 1.4 Ω • Improved noise immunity ID


    Original     		PDF SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 SPN03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5

    diode 1538

    Abstract: No abstract text available
    Text: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5 diode 1538

    Untitled

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5

    03N60C3

    Abstract: IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3
    Text: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3

    DIODE JS.9 smd

    Abstract: No abstract text available
    Text: SIEMENS 03N60S5 03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-T0220-3-1 03N60S5 Q67040-S4184 P-T0263-3-2 DIODE JS.9 smd