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    048N12N Price and Stock

    Infineon Technologies AG IPP048N12N3GXKSA1

    MOSFET N-CH 120V 100A TO220-3
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    DigiKey IPP048N12N3GXKSA1 Tube 984 1
    • 1 $3.97
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    Avnet Americas IPP048N12N3GXKSA1 Tube 16 Weeks 500
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    • 1000 $1.46325
    • 10000 $1.42697
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    Newark IPP048N12N3GXKSA1 Bulk 296 1
    • 1 $2.81
    • 10 $2.35
    • 100 $1.89
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    Bristol Electronics IPP048N12N3GXKSA1 1,162
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    Rochester Electronics IPP048N12N3GXKSA1 24 1
    • 1 $1.99
    • 10 $1.99
    • 100 $1.87
    • 1000 $1.69
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    TME IPP048N12N3GXKSA1 1
    • 1 $2.68
    • 10 $2.37
    • 100 $1.98
    • 1000 $1.98
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    Chip One Stop IPP048N12N3GXKSA1 Tube 1,000
    • 1 $1.59
    • 10 $1.59
    • 100 $1.57
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    EBV Elektronik IPP048N12N3GXKSA1 500 17 Weeks 500
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    New Advantage Corporation IPP048N12N3GXKSA1 500 1
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    Win Source Electronics IPP048N12N3GXKSA1 1,724
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    • 100 $2.1057
    • 1000 $1.825
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    Infineon Technologies AG IPP048N12N3 G

    MOSFETs N-Ch 120V 100A TO220-3 OptiMOS 3
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    Mouser Electronics IPP048N12N3 G 345
    • 1 $3.54
    • 10 $3.3
    • 100 $1.87
    • 1000 $1.81
    • 10000 $1.81
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    Infineon Technologies AG IPP048N12N3G

    MOSFET N-CH 120V 100A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics IPP048N12N3G 1,724
    • 1 -
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    • 100 $3.015
    • 1000 $3.015
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    048N12N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    048N12N

    Abstract: 048N12N3 PG-TO220-3 JESD22 IPP048N12N3 IPP048N12N3 G
    Text: 048N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 4.8 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPP048N12N3 PG-TO220-3 048N12N3 048N12N 048N12N3 PG-TO220-3 JESD22 IPP048N12N3 G PDF

    048N12N

    Abstract: IEC61249-2-21 JESD22 PG-TO220-3 IPP048N12N3
    Text: 048N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 4.8 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPP048N12N3 PG-TO220-3 IEC61249-2-21 048N12N 048N12N IEC61249-2-21 JESD22 PG-TO220-3 PDF