AMP STK
Abstract: No abstract text available
Text: 107-68098 Packaging Specification 04May09 Rev L WHISTLER MOD JK 1. PURPOSE 目的 Define the packaging specification and packaging method of WHISTLER MOD JK products. 订定 WHISTLER MOD JK 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
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04May09
6339207-X
1339207-X
6339170-X
1339170-X
6339169-X
1339133-X
1339169/167/133/207-X;
6339167/6339169/6339207-X:
QR-ME-030B
AMP STK
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BL-5C
Abstract: bl-5ct bl-4u elcon 1000 elcon 1650613-1
Text: 107-68573 Packaging Specification 04May09 Rev R HSG AND COVER FOR SALE TO ZHUHAI 1. PURPOSE 目的 Define the packaging specifiction and packaging method of HSG AND COVER FOR SALE TO ZHUHAI. 订定 HSG AND COVER FOR SALE TO ZHUHAI 产品之包装规格及包装方式。
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04May09
QR-ME-030B
1651684-141pcsHSG35pcs.
41pcsHSG35pcs.
41pcs
HSG35pcs
1766091-1/267pcsHSG64pcs.
67pcsHSG64pcs.
67pcs
HSG64pcs
BL-5C
bl-5ct
bl-4u
elcon 1000
elcon
1650613-1
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1746798-1
Abstract: No abstract text available
Text: 107-68358 Packaging Specification 04May09 Rev M 2.5MM PITCH BATTERY CONN 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 2.5MM PITCH BATTERY CONN. 订定 2.5MM PITCH BATTERY CONN 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
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04May09
QR-ME-030B
1746798-1
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102x102-1
Abstract: No abstract text available
Text: 107-68334 Packaging Specification 04May09 Rev P 2HEADER ASSY SINGLE SLOT CARD BUS. 1. PURPOSE 目的 Define the packaging specifiction and packaging method of HEADER ASSY SINGLE SLOT CARD BUS. 订定 HEADER ASSY SINGLE SLOT CARD BUS 产品之包装规格及包装方式。
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04May09
QR-ME-030B
102x102-1
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si410
Abstract: Si4104
Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested
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Si4104DY
2002/95/EC
Si4104DY-T1-E3
Si4104DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si410
Si4104
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intel drMOS 4.0
Abstract: marking 2x marking code D22 8 pin marking code D22 multiphase boost
Text: SiC778A Vishay Siliconix High Performance DrMOS – Integrated Power Stage DESCRIPTION FEATURES The SiC778 is an integrated power stage solution optimized for synchronous buck applications offering high current, high efficiency and high power density. Packaged in Vishay’s
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SiC778A
SiC778
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
intel drMOS 4.0
marking 2x
marking code D22
8 pin marking code D22
multiphase boost
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Untitled
Abstract: No abstract text available
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested
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Si3430DV
2002/96/EC
Si3430DV-T1-E3
Si3430DV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/96/EC
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Si4426DY
2002/96/EC
Si4426DY-T1-E3
Si4426DY-T1-GE3
18-Jul-08
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SI3433BDV
Abstract: No abstract text available
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition
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Si3433BDV
2002/96/EC
Si3433BDV-T1-E3
Si3433BDV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si3424DV
2002/95/EC
Si3424DV-T1-E3
Si3424DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4952DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.023 at VGS = 10 V 8 0.028 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si4952DY
2002/95/EC
Si4952DY-T1-E3
Si4952DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI4920DY
Abstract: No abstract text available
Text: Si4920DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.025 at VGS = 10 V ± 6.9 0.035 at VGS = 4.5 V ± 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4920DY
2002/95/EC
Si4920DY-T1-E3
Si4920DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4426DY
2002/95/EC
Si4426DY-T1-E3
Si4426DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si3430
Abstract: No abstract text available
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested
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Si3430DV
2002/95/EC
Si3430DV-T1-E3
Si3430DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si3430
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Untitled
Abstract: No abstract text available
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC769
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Si3403DV
2002/95/EC
Si3403DV-T1-E3
Si3403DV-T1-GE3
11-Mar-11
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SI3430DV-T1-E3
Abstract: No abstract text available
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested
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Si3430DV
2002/95/EC
Si3430DV-T1-E3
Si3430DV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4682DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ.) 11 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology
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Si4682DY
2002/95/EC
Si4682DY-T1-E3
Si4682DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si3454ADV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.060 at VGS = 10 V 4.5 0.085 at VGS = 4.5 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3454ADV
2002/95/EC
Si3454ADV-T1-E3
Si3454ADV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4952DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.023 at VGS = 10 V 8 0.028 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si4952DY
2002/95/EC
Si4952DY-T1-E3
Si4952DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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150V Single N-Channel Power MOSFET TSOP-6
Abstract: si3440
Text: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small
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Si3440DV
2002/95/EC
Si3440DV-T1-E3
Si3440DV-T1-GE3
11-Mar-11
150V Single N-Channel Power MOSFET TSOP-6
si3440
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si4833a
Abstract: No abstract text available
Text: Si4833ADY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.072 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET
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Si4833ADY
2002/95/EC
Si4833ADY-T1-E3
Si4833ADY-T1-GE3
18-Jul-08
si4833a
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Si4114DY
Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
18-Jul-08
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Si4684DY-T1-GE3
Abstract: Si4684DY Si4684DY-T1-E3
Text: Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology
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Si4684DY
2002/95/EC
Si4684DY-T1-E3
Si4684DY-T1-GE3
18-Jul-08
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