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    SI4426DY Search Results

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    SI4426DY Price and Stock

    Vishay Siliconix SI4426DY-T1-E3

    MOSFET N-CH 20V 6.5A 8SO
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    DigiKey SI4426DY-T1-E3 Cut Tape 1
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    SI4426DY-T1-E3 Digi-Reel 1
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    SI4426DY-T1-E3 Reel 2,500
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    Vishay Intertechnologies SI4426DY-T1-GE3

    Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4426DY-T1-GE3)
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    Avnet Americas SI4426DY-T1-GE3 Reel 2,500
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    Mouser Electronics SI4426DY-T1-GE3
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    Vishay Intertechnologies SI4426DY-T1

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    Bristol Electronics SI4426DY-T1 4,656
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    Vishay Intertechnologies SI4426DY-T1-E3

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    Bristol Electronics SI4426DY-T1-E3 2,293
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    Quest Components SI4426DY-T1-E3 1,834
    • 1 $7.992
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    TTI SI4426DY-T1-E3 Reel 2,500
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    SI4426DY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4426DY Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI4426DY Vishay Siliconix MOSFETs Original PDF
    SI4426DY-T1 Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI4426DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6.5A 8-SOIC Original PDF
    SI4426DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6.5A 8-SOIC Original PDF

    SI4426DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/96/EC


    Original     		PDF Si4426DY 2002/96/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4426DY 2002/95/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    71107

    Abstract: No abstract text available
    Text: Si4426DY New Product Vishay Siliconix N-Channel 2.5-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "8.5 0.035 @ VGS = 2.5 V "7.1 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4426DY S-99545--Rev. 20-Dec-99 71107

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4426DY 2002/95/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free Available RoHS* COMPLIANT


    Original     		PDF Si4426DY Si4426DY-T1 Si4426DY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "8.5 0.035 @ VGS = 2.5 V "7.1 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4426DY 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free Available RoHS* COMPLIANT


    Original     		PDF Si4426DY Si4426DY-T1 Si4426DY-T1-E3 08-Apr-05

    Si4426DY

    Abstract: Si4426DY-T1-E3 Si4426DY-T1-GE3
    Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4426DY 2002/95/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 18-Jul-08

    AN609

    Abstract: Si4426DY
    Text: Si4426DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4426DY AN609 15-Mar-07

    Si4426DY

    Abstract: Si4426DY-T1-E3 Si4426DY-T1-GE3
    Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4426DY 2002/95/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4426DY 2002/95/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 11-Mar-11

    Si4426DY

    Abstract: No abstract text available
    Text: Si4426DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "8.5 0.035 @ VGS = 2.5 V "7.1 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4426DY S-01041--Rev. 15-May-00

    71107

    Abstract: Si4426DY Si4426DY-T1 Si4426DY-T1-E3
    Text: Si4426DY Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free Available RoHS* COMPLIANT


    Original     		PDF Si4426DY Si4426DY-T1 Si4426DY-T1-E3 S-60557-Rev. 3-Apr-06 71107

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110