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    Vishay Siliconix SI5504BDC-T1-GE3

    MOSFET N/P-CH 30V 4A/3.7A 1206-8
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    DigiKey SI5504BDC-T1-GE3 Cut Tape 32,498 1
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    SI5504BDC-T1-GE3 Digi-Reel 32,498
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    SI5504BDC-T1-GE3 Reel 30,000 3,000
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    Vishay Siliconix SI5504BDC-T1-E3

    MOSFET N/P-CH 30V 4A/3.7A 1206-8
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    DigiKey SI5504BDC-T1-E3 Cut Tape 2,690 1
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    SI5504BDC-T1-E3 Digi-Reel 2,690
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    RS SI5504BDC-T1-E3 Bulk 3,000
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    Vishay Siliconix SI5504DC-T1-E3

    MOSFET N/P-CH 30V 2.9A 1206-8
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    DigiKey SI5504DC-T1-E3 Digi-Reel 1
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    SI5504DC-T1-E3 Cut Tape
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    Vishay Siliconix SI5504DC-T1-GE3

    MOSFET N/P-CH 30V 2.9A 1206-8
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    Vishay Intertechnologies SI5504BDC-T1-GE3

    MOSFETs RECOMMENDED ALT SI55
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    Mouser Electronics SI5504BDC-T1-GE3 37,244
    • 1 $1.21
    • 10 $0.812
    • 100 $0.616
    • 1000 $0.425
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    TTI SI5504BDC-T1-GE3 Reel 3,000
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    EBV Elektronik SI5504BDC-T1-GE3 143 Weeks 3,000
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    Vyrian SI5504BDC-T1-GE3 21,151
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    Find more SI5504 price and stock on Findchips.com

    SI5504 Datasheets (8)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    SI5504BDC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8 Original PDF
    SI5504BDC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8 Original PDF
    Si5504DC Vishay Intertechnology Complementary 30-V (D-S) MOSFET Original PDF
    SI5504DC Vishay Siliconix MOSFETs Original PDF
    Si5504DC SPICE Device Model Vishay Complementary 20-V (D-S) MOSFET Original PDF
    SI5504DC-T1 Vishay Intertechnology Complementary 30-V (D-S) MOSFET Original PDF
    SI5504DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 2.9A 1206-8 Original PDF
    SI5504DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 2.9A 1206-8 Original PDF

    SI5504 Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = -10 V -3.7 0.235 at VGS = -4.5 V -2.8 1206-8 8 1.


    Original     		Si5504BDC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5504DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5504DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si5504DC S-61928Rev. 09-Oct-06 PDF

    AN609

    Abstract: Si5504BDC
    Text: Si5504BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si5504BDC AN609 03-May-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)


    Original     		Si5504BDC 2002/95/EC 18-Jul-08 PDF

    MOSFET QG

    Abstract: Si5504DC
    Text: SPICE Device Model Si5504DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Applicable over the −55 to 125°C Temperature Range


    Original     		Si5504DC 07-Oct-99 MOSFET QG PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5504DC New Product Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = –10 V "2.8 0.290 @ VGS = –4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET


    Original     		Si5504DC S-62428--Rev. 04-Oct-99 PDF

    AN609

    Abstract: Si5504DC
    Text: Si5504DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si5504DC AN609 21-Jun-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5504DC Vishay Siliconix Complementary 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V ± 3.9 0.143 at VGS = 4.5 V ± 3.0 0.165 at VGS = - 10 V ± 2.8 0.290 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21


    Original     		Si5504DC 2002/95/EC Si5504DC-T1-E3 Si5504DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si5504

    Abstract: Si5504BDC-T1-GE3 Si5504BDC Si5504BDC-T1-E3 TB-3050 SI5504BDC-T1
    Text: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)


    Original     		Si5504BDC 2002/95/EC 18-Jul-08 si5504 Si5504BDC-T1-GE3 Si5504BDC-T1-E3 TB-3050 SI5504BDC-T1 PDF

    Si5504DC-T1-E3

    Abstract: Si5504DC
    Text: Si5504DC Vishay Siliconix Complementary 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V ± 3.9 0.143 at VGS = 4.5 V ± 3.0 0.165 at VGS = - 10 V ± 2.8 0.290 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21


    Original     		Si5504DC 2002/95/EC Si5504DC-T1-E3 Si5504DC-T1-GE3 18-Jul-08 PDF

    Si5504DC

    Abstract: Si5504DC-T1
    Text: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1


    Original     		Si5504DC Si5504DC-T1 S-21251--Rev. 05-Aug-02 PDF

    Si5504DC

    Abstract: Si5504DC-T1
    Text: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1


    Original     		Si5504DC Si5504DC-T1 18-Jul-08 PDF

    Si5504BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si5504BDC 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)


    Original     		Si5504BDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5504BDC

    Abstract: Si5504BDC-T1-E3 si5504 transistor mosfet n-ch drain current Si5504DC Si5504DC-T1 N- and P-Channel 30-V D-S MOSFET
    Text: Specification Comparison Vishay Siliconix Si5504BDC vs. Si5504DC Description: Package: Pin Out: N- and P-Channel 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5504BDC-T1-E3 Replaces Si5504DC-T1-E3 Si5504BDC-T1-E3 Replaces Si5504DC-T1


    Original     		Si5504BDC Si5504DC Si5504BDC-T1-E3 Si5504DC-T1-E3 Si5504DC-T1 30-Aug-07 si5504 transistor mosfet n-ch drain current N- and P-Channel 30-V D-S MOSFET PDF

    62428

    Abstract: Si5504DC "marking code D2"
    Text: Si5504DC New Product Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = –10 V "2.8 0.290 @ VGS = –4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET


    Original     		Si5504DC S-62428--Rev. 04-Oct-99 62428 "marking code D2" PDF

    Si5504BDC

    Abstract: Si5504BDC-T1-E3
    Text: New Product Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8


    Original     		Si5504BDC Si5504BDC-T1-E3 08-Apr-05 PDF

    si5504

    Abstract: Si5504BDC Si5504BDC-T1-E3
    Text: New Product Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8


    Original     		Si5504BDC Si5504BDC-T1-E3 18-Jul-08 si5504 PDF

    Si5504DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5504DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si5504DC 18-Jul-08 PDF

    MARKING CODE EA

    Abstract: No abstract text available
    Text: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1


    Original     		Si5504DC Si5504DC-T1 08-Apr-05 MARKING CODE EA PDF

    Car Battery 12V pulse charger

    Abstract: 638V max4919 N-FET FDC6561AN
    Text: 19-0614; Rev 0; 8/06 Battery Power-Up Logic with Overvoltage and Overcurrent Protection Features The MAX4919B/MAX4920B/MAX4921B overvoltage protection controllers protect low-voltage systems against high-voltage faults up to +28V. An internal 1.8A min pFET with low RON (100mΩ) switches a battery to


    Original     		MAX4919B/MAX4920B/MAX4921B Car Battery 12V pulse charger 638V max4919 N-FET FDC6561AN PDF

    smd transistor m6

    Abstract: N1 smd transistor SMD Transistor DN smd transistor m11 ATA6870 Active Cell Balancing smd transistor m7 smd transistor n2 cell balancing M6 smd transistor
    Text: Active Cell Balancing Methods for Li-Ion Battery Management ICs using the ATA6870 ATA6870 1. Scope This application note describes methods of active battery cell balancing with the ATA6870. Application Note 2. Cell Balancing In a multi-cell battery pack, no two cells are identical. There are always slight differences in the state of charge, capacity, impedance and temperature characteristics —


    Original     		ATA6870 ATA6870. 9184B smd transistor m6 N1 smd transistor SMD Transistor DN smd transistor m11 ATA6870 Active Cell Balancing smd transistor m7 smd transistor n2 cell balancing M6 smd transistor PDF

    cs 740 mosfet

    Abstract: si5504 Dual N-MOSFET sot23 40-AAE MAX4864LELT MAX4864LEUT-T MAX4865LEUT-T Dual N-MOSFET 30V 1A charge pump 5V udfn
    Text: 19-3582; Rev 2; 5/10 Overvoltage Protection Controllers with Reverse Polarity Protection The MAX4864L/MAX4865L/MAX4866L/MAX4867 overvoltage protection controllers protect low-voltage systems against high-voltage faults up to +28V, and negative voltages down to -28V. These devices drive a


    Original     		MAX4864L/MAX4865L/MAX4866L/MAX4867 MAX4864L/MAX4865L/MAX4866L/MAX4867 cs 740 mosfet si5504 Dual N-MOSFET sot23 40-AAE MAX4864LELT MAX4864LEUT-T MAX4865LEUT-T Dual N-MOSFET 30V 1A charge pump 5V udfn PDF

    1N4007 MINI MELF

    Abstract: No abstract text available
    Text: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4


    Original     		250ns DO-220AA V-540V; V-440V; DO-204AL DO-41) DO-204AC 1N4007 MINI MELF PDF