D100J20C0GF
Abstract: D103M D101J D223M D103Z25Z5V D109C D472M D471K D222M
Text: D Series Vishay BCcomponents Ceramic Disc Capacitors Class 1 and 2, 50 VDC, General Purpose FEATURES D D • Low losses • High stability • High capacitance in small size Tangent line SH Tangent line • Kinked preferred or straight leads DR • Compliant to RoHS directive 2002/95/EC
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
D100J20C0GF
D103M
D101J
D223M
D103Z25Z5V
D109C
D472M
D471K
D222M
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7443
Abstract: AN609 04JAN10
Text: SiB422EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiB422EDK
AN609,
04-Jan-10
7443
AN609
04JAN10
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AN609
Abstract: No abstract text available
Text: SiR424DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiR424DP
AN609,
04-Jan-10
AN609
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Untitled
Abstract: No abstract text available
Text: D Series Vishay BCcomponents Ceramic Disc Capacitors Class 1 and 2, 50 VDC, General Purpose FEATURES D D • Low losses • High stability • High capacitance in small size Tangent line SH Tangent line • Kinked preferred or straight leads DR • Compliant to RoHS directive 2002/95/EC
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PDF
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2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQE48T40025 DC-DC Converter Data Sheet 36-75 VDC Input; 2.5 VDC @ 40A Output Features Applications • Telecommunications Data communications Wireless communications Servers, workstations Benefits High efficiency – no heat sink required Higher current capability at elevated temperatures
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SQE48T40025
EN60950
SR-332,
UL6095mmon
ZD-01723
04-Jan-10
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XP1057-BD
Abstract: DM6030HK XP1057
Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept
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P1057-BD
04-Jan-10
MIL-STD-883
XP1057-BD
unifor057-BD-EV1
XP1057-BD
DM6030HK
XP1057
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pd 223
Abstract: SiHP18N50C SiHP18N50C-E3 pd223w pd223
Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V • 100 % Avalanche Tested 0.225 Qg (Max.) (nC) 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness
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SiHP18N50C
2002/95/EC
O-220
SiHP18N50C-E3
18-Jul-08
pd 223
pd223w
pd223
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SL14N
Abstract: SL12N
Text: SL12N thru SL14N Low VF Schottky Barrier Diodes REVERSE VOLTAGE 20-40 Volts FORWARD CURRENT 1000 mAmpere P b Lead Pb -Free Features: *Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound.
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SL12N
SL14N
MIL-S-19500
OD-323F
MIL-STD-750,
004grams
OD-323F
04-Jan-10
SL14N
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AN609
Abstract: Si4477DY
Text: Si4477DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si4477DY
AN609,
04-Jan-10
AN609
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Untitled
Abstract: No abstract text available
Text: D Series Vishay BCcomponents Ceramic Disc Capacitors Class 1 and 2, 50 VDC, General Purpose FEATURES D D • Low losses • High stability • High capacitance in small size Tangent line SH Tangent line • Kinked preferred or straight leads DR • Compliant to RoHS directive 2002/95/EC
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2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: H Series Vishay BCcomponents Ceramic Disc Capacitors Class 2, 500 VDC, 1 kVDC, General Purpose D FEATURES D • High capacitance in small size • Kinked preferred or straight leads Tangent line SH • Compliant to RoHS directive 2002/95/EC Tangent line
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2002/95/EC
11-Mar-11
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XP1059-BD
Abstract: XP1059 XP1059-BD-EV1 BD 583 DM6030HK
Text: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept
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P1059-BD
04-Jan-10
MIL-STD-883
XP1059-BD
rep059-BD-EV1
XP1059-BD
XP1059
XP1059-BD-EV1
BD 583
DM6030HK
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XP1070-BD
Abstract: P1070-BD MMIC 5043 DM6030HK 10W Power Amplifier XP1070 OC 140 germanium transistor
Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +38.5 dBm P1dB Compression Point +40.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept
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P1070-BD
04-Jan-10
MIL-STD-883
XP1070-BD
070-BD-EV1
XP1070-BD
P1070-BD
MMIC 5043
DM6030HK
10W Power Amplifier
XP1070
OC 140 germanium transistor
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Data Converter Terminology
Abstract: atmel dac adc bcd to analog converter R2001 SH94902 ATMEL 2416 atmel square wave generator circuit
Text: Data Converter Terminology 1. Introduction This application note describes a number of parameters related to "binary" and "linear" data converters, as specified in Atmel's datasheets, and discusses to what point they can be tested. "Binary" means that the converter uses all binary code combinations. "Linear" means that there is no non-linearity other than that of quantization: all
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6022C
04-Jan-10
Data Converter Terminology
atmel dac adc
bcd to analog converter
R2001
SH94902
ATMEL 2416
atmel square wave generator circuit
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Untitled
Abstract: No abstract text available
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book Ceramic Disc Capacitors vishay BCCOMPONEnTS vsE-db0071-1001 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsE-db0071-1001
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AN609
Abstract: SUP60N10-18P
Text: SUP60N10-18P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SUP60N10-18P
AN609,
04-Jan-10
AN609
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2825 transformer
Abstract: IRFR110 SiHFR110 SiHFR110-E3 IRFR110 Vishay
Text: IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V 0.54 • Repetitive Avalanche Rated • Surface Mount (IRFR110, SiHFR110) Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 • Available in Tape and Reel
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IRFR110,
SiHFR110
2002/95/EC
O-252)
18-Jul-08
2825 transformer
IRFR110
SiHFR110-E3
IRFR110 Vishay
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H472
Abstract: CERAMIC DISC CAPACITORS
Text: V ishay I n tertech n olo g y, I n c . Capacitors - Capacitance Range: 1 nF to 4.7 nF AND TEC I INNOVAT O L OGY H Series 500 V DC and 1 kV (DC) N HN Ceramic Disc Capacitors O 19 62-2012 Single Layer Ceramic Disc Capacitors Key Benefits • High capacitance in small size
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2002/95/EC
04-Jan-10zaa
VMN-PT9162-1112
04-Jan-10
H472
CERAMIC DISC CAPACITORS
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XP1058
Abstract: BD 149 transistor bd 36 930 DM6030HK XP1058-BD
Text: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept
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P1058-BD
04-Jan-10
MIL-STD-883
sur058-BD-EV1
XP1058-BD
XP1058
BD 149 transistor
bd 36 930
DM6030HK
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Untitled
Abstract: No abstract text available
Text: SQE48T40025 DC-DC Converter Data Sheet 36-75 VDC Input; 2.5 VDC @ 40A Output Features Applications • Telecommunications Data communications Wireless communications Servers, workstations Benefits High efficiency – no heat sink required Higher current capability at elevated temperatures
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Original
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PDF
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SQE48T40025
ZD-01723
04-Jan-10
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225361-1
Abstract: RG-55A
Text: DRAWING THIS MADE DRAWIHG IN IS 4 THIRD ANGLE UHPUBLISHED. C O P Y R IG H T 19 3 PROJECTION RELEASED BY AM P EOR P UBL I C A T I ON IN C O R P O R A T E D . 2 R E V IS IO N S ,19 AJ A L L IN T E R N A T I O N A L R IG H T S R E S E R V E D . P F ZONE LTR E
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04FEB00
04JAN10
142B/U
RG-55A/U
223/U
RG-58A/U
58C/U
I-9-92
amp06572
/home/amp06572/edmmod
225361-1
RG-55A
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7420
Abstract: RF connector plug spec
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FOR ALL C O P Y R IG H T BY 1 T C 0 E L E C T R O N IC S P U B L IC A T IO N R IG H T S -, - RESERVED. C O R P O R A T IO N . D - 2 1 .5 9 MAX [.8 5 0 ] C 3/8-32 UNEF-2B B •7/16 RECOMMENDED A
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31MAR2000
06DEC05
us0t8845
0S14-0456-04
18NOV05
04JAN10
QQ-B-626
QQ-N-290
RG-59/U
7420
RF connector plug spec
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Untitled
Abstract: No abstract text available
Text: T H I S D R A W I N G IS U N P U B L I S H E D . V E R T R A U L I C H E U N V E R 0 E F F E N T LIC H T E Z E I C H N U N G C O P Y R IG H T 1 9 9 7 i i R E L E A S E D FOR P U B LIC A TIO N M A T E D WI T H . P A S S E N D ZU: FREI F U E R V E R O E F F E N T L I C H U N G
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PDF
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04JAN10
27JUN96
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 E L E C T R O N IC S 2 P U B L IC A T IO N IN TE R N A TIO N A L RIGHTS R E V IS IO N S R E S E R VE D . G C O R P O R A T IO N . D E S C R IP T IO N G1 REV
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04JAN10
B-162,
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