JESD97
Abstract: L50NH3LL STL50NH3LL
Text: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■
|
Original
|
PDF
|
STL50NH3LL
JESD97
L50NH3LL
STL50NH3LL
|
Untitled
Abstract: No abstract text available
Text: STL60NH3LL N-CHANNEL 30V - 0.0065Ω - 30A - PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ Power MOSFET TARGET SPECIFICATION General Features Type VDSS RDS(on) ID STL60NH3LL 30V < 0.0085Ω 16A Note 2 • IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm Max)
|
Original
|
PDF
|
STL60NH3LL
|
SD2942
Abstract: RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent
Text: SD2942 RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed
|
Original
|
PDF
|
SD2942
SD2942
SD2932.
RG316-25
marking code r10 surface mount diode
Wire wound resistor 5W
200B
700B
RG316
SD2932
ST40
SD2942 equivalent
|
Untitled
Abstract: No abstract text available
Text: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction
|
Original
|
PDF
|
STGP30NC60W
STGW30NC60W
O-247
O-220
O-247
|
Untitled
Abstract: No abstract text available
Text: STL50NH3LL N-channel 30V - 0.011Ω - 13A - PowerFLAT 6x5 Ultra low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1mm max)
|
Original
|
PDF
|
STL50NH3LL
|
GW30NC60W
Abstract: No abstract text available
Text: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 High frequency operation 1 Lower CRES / CIES ratio (no cross-conduction
|
Original
|
PDF
|
STGP30NC60W
STGW30NC60W
O-247
O-220
STGW30NC60W
STGP30NC60W
O-220
GW30NC60W
|
Untitled
Abstract: No abstract text available
Text: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio
|
Original
|
PDF
|
STL80N4LL
STL80N4LL
|
L80N4LL
Abstract: No abstract text available
Text: STL80N4LL N-CHANNEL 40V - 0.0046Ω - 80A PowerFLAT 6x5 STripFET™ MOSFET FOR DC-DC CONVERSION TARGET SPECIFICATION Table 1: General Features TYPE STL80N4LL • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 40 V < 0.005 Ω 20 A (2) TYPICAL RDS(on) = 0.0046 Ω @ 10V
|
Original
|
PDF
|
STL80N4LL
STL80N4LL
L80N4LL
|
Untitled
Abstract: No abstract text available
Text: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS
|
Original
|
PDF
|
SD2942
SD2942
SD2932.
SD2942W
|
sd2943
Abstract: 200B 700B M177 SD2933
Text: SD2943 RF Power Transistor HF/VHF/UHF N - Channel MOSFETs General Features • HIGH POWER CAPABILITY ■ POUT = 350W MIN. WITH 22dB GAIN @ 30 MHz ■ PSAT = 450 W ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES ■ GOLD METALLIZATION
|
Original
|
PDF
|
SD2943
SD2943
SD2933,
200B
700B
M177
SD2933
|
JESD97
Abstract: J-STD-020B PD54003L-E STMICROELECTRONICS MSL PACKAGES st 54003 TRANSISTOR AO SMD MARKING
Text: PD54003L-E RF Power Transistors The LdmoST Plastic FAMILY Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 3W WITH 20 dB GAIN @ 500MHz ■ NEW RF PLASTIC PACKAGE ■ EDS PROTECTION ■ SUPPLIED IN TAPE & REEL OF 3K UNITS
|
Original
|
PDF
|
PD54003L-E
500MHz
2002/93/EC
PD54003L-E
JESD97
J-STD-020B
STMICROELECTRONICS MSL PACKAGES
st 54003
TRANSISTOR AO SMD MARKING
|
Untitled
Abstract: No abstract text available
Text: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) ) s ( ct 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec •
|
Original
|
PDF
|
STL80N4LLF3
STL80N4LLF3
|
st 54003
Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection
|
Original
|
PDF
|
PD54003L-E
2002/95/EC
PD54003L-E
st 54003
TRANSISTOR AO SMD MARKING
J-STD-020B
|
STL80N4LLF3
Abstract: JESD97 L80N4LLF3 st MARKING E4
Text: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio
|
Original
|
PDF
|
STL80N4LLF3
STL80N4LLF3
JESD97
L80N4LLF3
st MARKING E4
|
|
|
Untitled
Abstract: No abstract text available
Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection
|
Original
|
PDF
|
PD54003L-E
2002/95/EC
PD54003L-E
|
IGBT STGW30NC60W
Abstract: No abstract text available
Text: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A High frequency operation 2 3 3 Lower CRES / CIES ratio (no cross-conduction
|
Original
|
PDF
|
STGP30NC60W
STGW30NC60W
O-247
O-220
STGW30NC60W
STGP30NC60W
O-247
O-220
IGBT STGW30NC60W
|
STGW30NC60W
Abstract: STGP30NC60W GW30NC60W GP30NC60W JESD97 STGB30NC60W STGB30NC60WT4
Text: STGB30NC60W - STGP30NC60W STGW30NC60W 30 A - 600 V - ultra fast IGBT Features • High frequency operation ■ Lower CRES / CIES ratio no cross-conduction susceptibility 2 Applications ■ ■ 3 3 1 1 TO-247 High frequency motor controls, inverters, ups
|
Original
|
PDF
|
STGB30NC60W
STGP30NC60W
STGW30NC60W
O-247
O-220
STGB30NC60WT4
GB30NC60W
GP30NC60W
STGW30NC60W
STGP30NC60W
GW30NC60W
GP30NC60W
JESD97
STGB30NC60WT4
|
Untitled
Abstract: No abstract text available
Text: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■
|
Original
|
PDF
|
STL50NH3LL
|
sd2943
Abstract: No abstract text available
Text: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability
|
Original
|
PDF
|
SD2943
SD2943
SD2933,
|
P7NK30Z
Abstract: No abstract text available
Text: STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID Pw STF7NK30Z 300 V < 0.9 Ω 5A 20 W STP7NK30Z 300 V < 0.9 Ω 5A 50 W STD7NK30Z 300 V < 0.9 Ω
|
Original
|
PDF
|
STD7NK30Z,
STF7NK30Z
STP7NK30Z
O-220,
O-220FP,
STP7NK30Z
STD7NK30Z
O-220FP
P7NK30Z
|
IGBT STGW30NC60W
Abstract: GW30NC60W GP30NC60W JESD97 STGP30NC60W STGW30NC60W
Text: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction
|
Original
|
PDF
|
STGP30NC60W
STGW30NC60W
O-247
O-220
O-247
IGBT STGW30NC60W
GW30NC60W
GP30NC60W
JESD97
STGP30NC60W
STGW30NC60W
|
IGBT STGW30NC60W
Abstract: W30NC60W STGW30NC60W schematic diagram UPS 600 STGP30NC60W W30NC60
Text: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • Type VCES VCE sat (Max)@ 25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A ■ HIGH FREQUENCY OPERATION ■ VERY SOFT ULTRA FAST RECOVERY ANTI
|
Original
|
PDF
|
STGP30NC60W
STGW30NC60W
O-247
O-220
STGW30NC60W
STGP30NC60W
O-247
O-220
IGBT STGW30NC60W
W30NC60W
schematic diagram UPS 600
W30NC60
|
B5568
Abstract: EELXT351E 24903* intel
Text: LXT351 T1/E1 Short Haul Transceiver with Crystal-less Jitter Attenuation Datasheet The LXT351 is a full-featured, fully-integrated transceiver for T1 and E1 short-haul applications. The LXT351 is software switchable between T1 and E1 operation, and offers pulse
|
Original
|
PDF
|
LXT351
LXT351
B5570-01
B5568
EELXT351E
24903* intel
|
RCW0
Abstract: w1p10 STR71x STR73x "W1P" W1P 17 0xE6000010 B1F01 UM0116 0x55aa55aa
Text: UM0116 User manual STR7 family Flash programming Introduction This reference manual describes how to program the Flash memory of an STR7 microcontroller. The STR7 embedded Flash memory can be programmed using In-Circuit Programming or In-Application programming.
|
Original
|
PDF
|
UM0116
RCW0
w1p10
STR71x
STR73x
"W1P"
W1P 17
0xE6000010
B1F01
UM0116
0x55aa55aa
|