APT8024B2VFR
Abstract: No abstract text available
Text: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8024B2VFR
APT8024LVFR
O-264
O-264
APT8024
IN810
MIL-STD-750
APT8024B2VFR
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PDF
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APT5020BLC
Abstract: No abstract text available
Text: APT5020BLC APT5020SLC 500V 26A 0.200Ω POWER MOS VITM BLC D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and
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APT5020BLC
APT5020SLC
O-247
O-247
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A20M18LVFR
Abstract: APT20M18B2VFR
Text: APT20M18B2VFR A20M18LVFR 200V 100A POWER MOS V FREDFET 0.018Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M18B2VFR
A20M18LVFR
O-264
O-264
APT20M18B2VFR
O-247
A20M18LVFR
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PDF
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APL1001J
Abstract: No abstract text available
Text: S S D G 27 2 T- D G SO APL1001J S ISOTOP 18.0A 0.60W 1000V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APL1001J
E145592
APL1001J
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PDF
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APL1001J
Abstract: No abstract text available
Text: S S D D G G 27 2 T- SO APL1001J S ISOTOP 1000V 18.0A 0.60Ω "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APL1001J
E145592
APL1001J
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PDF
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APL501J
Abstract: No abstract text available
Text: S S D G 27 2 T- D G SO APL501J S ISOTOP 43.0A 0.12W 500V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APL501J
E145592
APL501J
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PDF
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xcf16pfs
Abstract: Xilinx XCF04S XCF01S XC2V80 DS026
Text: Platform Flash In-System Programmable Configuration PROMs R DS123 v2.3 May 7, 2004 Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles
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DS123
xcf16pfs
Xilinx XCF04S
XCF01S
XC2V80
DS026
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PDF
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TO-247 Package
Abstract: No abstract text available
Text: APT5020BLC 500V 26A 0.200 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,
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APT5020BLC
O-247
O-247
MIL-STD-750
TO-247 Package
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Untitled
Abstract: No abstract text available
Text: APT8024B2VFR APT8024LVFR 800V 33A POWER MOS V FREDFET 0.240Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8024B2VFR
APT8024LVFR
O-264
O-264
APT8024B2VFR
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: APT20M18B2VFR A20M18LVFR 200V 100A POWER MOS V FREDFET 0.018Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M18B2VFR
A20M18LVFR
O-264
O-264
APT20M18B2VFR
O-247
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PDF
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813A
Abstract: APL1001J
Text: S S D D G G 27 2 T- SO APL1001J S ISOTOP 1000V 18.0A 0.60W "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APL1001J
E145592
813A
APL1001J
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XCF16PFS48C
Abstract: XC2V80
Text: Platform Flash In-System Programmable Configuration PROMs R DS123 v2.0 November 5, 2003 Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From
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DS123
XCF01SVO20
XCF02SVO20
XCF04SVO20
XCF08PVO48
XCF16PVO48
XCF32PVO48
XCF08PFS48
XCF16PFS48
XCF32PFS48
XCF16PFS48C
XC2V80
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XCF04S pcb
Abstract: XC2V80
Text: R DS123 v2.4 July 20, 2004 3 9 Platform Flash In-System Programmable Configuration PROMS Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles
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DS123
VOG20,
FSG48,
VOG48.
XC2VP125
XCF04S pcb
XC2V80
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PDF
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APT10040B2
Abstract: No abstract text available
Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10040B2VFR
APT10040LVFR
O-264
O-264
APT10040
O-247
APT10040B2
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PDF
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NW4004-CS01
Abstract: 33070 S1365 050590
Text: SAW Bandpass Filter 250151B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions
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250151B
ITF04A001
S1365
NW4004-CS01
NW4004-CS01
33070
S1365
050590
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PDF
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Untitled
Abstract: No abstract text available
Text: S S D D G G 27 2 T- SO APL1001J S ISOTOP 1000V 18.0A 0.60W "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APL1001J
E145592
APL1001J
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PDF
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050590
Abstract: APT10040B2 APT10040B2VFR APT10040LVFR
Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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Original
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APT10040B2VFR
APT10040LVFR
O-264
O-264
APT10040
FO810
MIL-STD-750
050590
APT10040B2
APT10040B2VFR
APT10040LVFR
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F5044
Abstract: XCF02SVOG20C Xilinx XCF08P xcf04svOg20c XCF16PFS48C XCF04S fit XCF01S-VO20C F50450 marking aab 8 tsop XCF04SVO20C0936
Text: R DS123 v2.4 July 20, 2004 3 9 Platform Flash In-System Programmable Configuration PROMS Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles
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DS123
PCN2004-18
F5044
XCF02SVOG20C
Xilinx XCF08P
xcf04svOg20c
XCF16PFS48C
XCF04S fit
XCF01S-VO20C
F50450
marking aab 8 tsop
XCF04SVO20C0936
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PDF
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PF7700
Abstract: No abstract text available
Text: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8024B2VFR
APT8024LVFR
O-264
O-264
APT8024
Curr084)
O-247
PF7700
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PDF
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TO-264 Package
Abstract: APT5010LLC
Text: APT5010LLC 500V 47A 0.100 Ω POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,
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APT5010LLC
O-264
O-264
APT5010LLC
1TD-750
TO-264 Package
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PDF
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APT5020BLC
Abstract: APT5020 APT5020SLC
Text: APT5020BLC APT5020SLC 500V 26A 0.200W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
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Original
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APT5020BLC
APT5020SLC
O-247
O-247
APT5020
APT5020BLC
APT5020
APT5020SLC
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PDF
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Untitled
Abstract: No abstract text available
Text: S S D D G G 27 2 T- SO APL501J S ISOTOP 43.0A 0.12W 500V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APL501J
E145592
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PDF
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XCF02S pcb
Abstract: XCF08PFS48 XCF32PFS48C XCF01SVO20 XCF02S XCF32P DS123 FS48 VO20 VO48
Text: Platform Flash In-System Programmable Configuration PROMs R DS123 v2.1 November 18, 2003 Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From
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DS123
XCF01S/XCF02S/XCF04S
XCF08P/XCF16Pon
XCF02S pcb
XCF08PFS48
XCF32PFS48C
XCF01SVO20
XCF02S
XCF32P
DS123
FS48
VO20
VO48
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PDF
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APT10M09B2VFR
Abstract: APT10M09LVFR
Text: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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Original
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APT10M09B2VFR
APT10M09LVFR
O-264
O-264
APT10M09B2VFR
O-247
APT10M09LVFR
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PDF
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