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    Hirose Electric Co Ltd 110-0508-0-73

    ;1100508073 - Bag (Alt: HR10A-7R-6SC(73))
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    Texas Instruments SN0508073PWR

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    Laird, A DuPont Business 9810508073

    EMI Gaskets, Sheets, Absorbers & Shielding
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    0508073 Datasheets Context Search

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    APT56M50B2

    Abstract: APT56M50L MIC4452
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT56M50B2 APT56M50L O-264 O-247 APT56M50B2 APT56M50L MIC4452 PDF

    APT56M50L

    Abstract: APT56M50B2 MIC4452 0508073
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT56M50B2 APT56M50L O-264 O-247 APT56M50L APT56M50B2 MIC4452 0508073 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra


    Original     		APT56M50B2 APT56M50L O-264 O-247 PDF

    APT56M50B2

    Abstract: APT56M50L MIC4452
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT56M50B2 APT56M50L O-264 O-247 APT56M50B2 APT56M50L MIC4452 PDF

    APT56M50B2

    Abstract: APT56M50L MIC4452 a1175
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT56M50B2 APT56M50L O-264 O-247 APT56M50B2 APT56M50L MIC4452 a1175 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra


    Original     		APT56M50B2 APT56M50L O-264 APT56M50B2 O-247 PDF