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Catalog Datasheet	MFG & Type	Document Tags	PDF
transistors BC 543 Abstract: TRANSISTOR BC 748 transistor BC 543 Text: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration	OCR Scan	Q62702-2373 OT-363 fiS35bD5 235LD5 BC857S 0535bD5 012Dbl3 transistors BC 543 TRANSISTOR BC 748 transistor BC 543	PDF
BFQ 58 Abstract: No abstract text available Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	Q62702-F659 OT-23 fi23SbDS BFQ 58	PDF
Untitled Abstract: No abstract text available Text: SIEMENS Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 BPX 66 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit	OCR Scan	0535bD5	PDF
Untitled Abstract: No abstract text available Text: •I Ô235L.05 OQÔIBbS 345 ■ SIEMENS S m art Q uad C hann el Low -S ide Sw itch T L E 5216 G Prelim inary Data Features • Overload protection • Short circuit protection • Cascadeable serial diagnostic interface • Overvoltage protection • nC compatible input	OCR Scan	P-DSO-20-10 00fll3bb TLE5216G	PDF
Untitled Abstract: No abstract text available Text: SIEMENS Standard EEPROM ICs SLx 24C01/02/P 1/2 Kbit 1 2 8 /2 5 6 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode D atasheet 1998-07-27 fi535bQ5 DllTMMÔ TE? • \ SLx 24C01/02/P Revision History: Current Version: 1998-07-27	OCR Scan	24C01/02/P fi535bQ5 H3SL05 D11T474	PDF
Untitled Abstract: No abstract text available Text: S IE M E N S BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F= 1.3 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1 =B II	OCR Scan	Q62702-F1312 OT-89 IS21el2 fl235b05 0122D22 0535bD5 D12E0E3	PDF
bch limit switch ll1 Abstract: SDA9064 EP-613 power supply sda 20160 EP-603 power supply ep 613 27mhz remote control transmitter and receiver ci VL-609 EP-613 DC POWER SUPPLY sda20160 Text: bSE D • ÖSBSbQS DQ53EÖ4 HTb WÊSIZG SIEMENS SIEMENS AKTIENGESELLSCHAF Digital Deflection Controller SDA 9064 Preliminary Data NMOS IC Features • Pipeline processor structure controls deflection stages • Raster alignment by keyboard or automatically	OCR Scan	DQ53E 100-/120-Hz Q67100-H8382 P-DIP-40 fl23SbOS 0G5332Ö 235bQ5 bch limit switch ll1 SDA9064 EP-613 power supply sda 20160 EP-603 power supply ep 613 27mhz remote control transmitter and receiver ci VL-609 EP-613 DC POWER SUPPLY sda20160	PDF
Untitled Abstract: No abstract text available Text: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code BF 988 - Q62702-F36 Pin Configuration 2 4 1 3 S D Û2 Package1	OCR Scan	Q62702-F36 300MHz r-700 fl235b05 00bbfl73 EHM070I2 EHM07013 00bb074	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	Q62702-F1321 BFG194 OT-223 23SbDS 012177b Q1E1777	PDF
sda9088 Abstract: No abstract text available Text: 47E » • ñS35bDS DGBHQEG SIEM ENS 3 «SIE6 SI EM ENS A K T I E N G E S E L L S C H A F -T -T v -c n -u Picture-in-Picture Processor SDA 9088 Prelim inary Data MOS 1C Features • Input interface compatible to the data format of the Digital Multistandard Decoder	OCR Scan	S35bDS fi23SbOS SDA9088 23SbOS sda9088	PDF
Untitled Abstract: No abstract text available Text: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,	OCR Scan	Q68000-A8883 fl235b05	PDF
Untitled Abstract: No abstract text available Text: SIEMENS PN P Silicon A F and Sw itching Tran sisto rs • • • • B C X 42 B S S 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel)	OCR Scan	Q62702-C1485 Q62702-S534 OT-23 flS35bG5 535L0S	PDF
Untitled Abstract: No abstract text available Text: BSS 229 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 250 V /0 0.07 A ^DS on 1 0 0 i l N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Pin C onfigu ration Marking Tape and Reel Inform ation	OCR Scan	Q62702-S600 E6296 SS229 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 G133771	PDF
Untitled Abstract: No abstract text available Text: BUZ 22 In fin e o n t«chnologi«s BUZ 22 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type VDs to ^DS on Package Ordering Code BUZ 22 100 V 34 A 0.055 Q TO-220 AB C67078-S1333-A2 Maximum Ratings Parameter Symbol Continuous drain current	OCR Scan	O-220 C67078-S1333-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T	PDF