Untitled
Abstract: No abstract text available
Text: RF-13 Rev 05MAY14 SMA–P–C–H–ST–CA1 SMA–J–C–H–ST–BH1 SMA–J–C–H–ST–PN1 SMA–J–C–H–ST–S10 SMA-CA SERIES 50Ω SMA COMPONENTS SPECIFICATIONS For complete specifications and assembly instructions see www.samtec.com?SMA-CA
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RF-13
05MAY14)
-CA10
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Untitled
Abstract: No abstract text available
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5484DU
Si5484DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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Si5419DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: PATT www.vishay.com Vishay Dale Thin Film Precision Automotive High Temperature 155 °C at full rated power Thin Film Chip Resistor, AEC-Q200 Qualified FEATURES • Resistance range: 2.75 to 301 k • AEC-Q200 qualified, table 7F • AEC-Q200 qualified, ESD rated class 1C
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AEC-Q200
MIL-STD-202,
MIL-PRF-55342
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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SILICONIX MARKING si5999edu-t1-ge3
Abstract: No abstract text available
Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5999EDU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SILICONIX MARKING si5999edu-t1-ge3
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SiR640ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8461DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8461DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a -8 e -7.5 RDS(on) (Ω) 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V -20 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization:
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Si5459DU
Si5459DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5415EDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) ID (A)a 0.0098 at VGS = - 4.5 V - 25 0.0114 at VGS = - 3.7 V - 25 0.0143 at VGS = - 2.5 V - 25 0.0250 at VGS = - 1.8 V -7 Qg (Typ.)
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Si5415EDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Si5479DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.015 at VGS = 10 V 12 0.0175 at VGS = 4.5 V 12 Qg (Typ.) 16 nC PowerPAK ChipFET Single 1 D AE XXX 4 Lot Traceability and Date Code D D • Load Switch, PA Switch, and Battery Switch
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Si5482DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AC 31061
Abstract: No abstract text available
Text: CZA www.vishay.com Vishay Dale Thick Film Chip Attenuator, Surface Mount, Unbalanced Type FEATURES • Single component reduces board space and component counts - replaces 3 or more components Available • Tolerance matching and temperature tracking superior to individual components
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CZA06S;
CZA04S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
AC 31061
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Untitled
Abstract: No abstract text available
Text: SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) (Ω) at VGS = 10 V 0.0267 RDS(on) (Ω) at VGS = 4.5 V 0.0290 ID (A) per leg 23 Configuration Dual TrenchFET power MOSFET
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SQJ956EP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI5481DU
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®
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Si5936DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5519DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω)
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Si5519DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8469DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5486DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A)a 0.015 at VGS = 4.5 V 12 0.017 at VGS = 2.5 V 12 0.021 at VGS = 1.8 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5486DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET
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Si5857DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5485DU
Si5485DU-T1-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
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Si5456DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5484DU
Si5484DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) (Ω) at VGS = 10 V 0.0267 RDS(on) (Ω) at VGS = 4.5 V 0.0290 ID (A) per leg 23 Configuration Dual TrenchFET power MOSFET
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SQJ956EP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSLY5940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 22114 DESCRIPTION As part of the SurfLightTM portfolio, the VSLY5940 is an infrared, 940 nm emitting diode based on GaAlAs surface
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VSLY5940
VSLY5940
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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