Untitled
Abstract: No abstract text available
Text: Si8469DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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Si8469DB
AN609,
9755u
4849u
0393m
1634m
0148u
1583m
6626m
19-Oct-10
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si8469DB
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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Si8469DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8469DB www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY -8 • TrenchFET power MOSFET RDS(on) (Ω) ID (A) a, e 0.064 at VGS = -4.5 V -4.6 0.076 at VGS = -2.5 V -4.2 0.115 at VGS = -1.5 V -3.4 0.180 at VGS = -1.2 V -1.2
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Original
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Si8469DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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si8469
Abstract: No abstract text available
Text: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si8469DB
2002/95/EC
11-Mar-11
si8469
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si8469DB
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
|
67370
Abstract: No abstract text available
Text: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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Si8469DB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
67370
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si8469DB
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SI-8100D
Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,
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Original
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Si8407DB
Si8439DB
Si8415DB
Si8425DB
Si8473EDB
Si8413DB
Si8487DB
Si8409DB
Si8483DB
Si8499DB
SI-8100D
Si8461
si8466
SI8425
si8812
si8802
SI8466EDB
si8489
Si8100DB
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PDF
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SI1489EDH
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems
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Original
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SiA920DJ
SC-70
SiB914DK
SC-75
Si1011X
Si8805EDB
com/mosfets/12-rated-on-res/
com/mosfets/15-rated-on-res/
VMN-PT0103-1402
SI1489EDH
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PDF
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Original
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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PDF
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SiB914
Abstract: SiA427DJ si2329ds si8802
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS
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Original
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SC-70
SC-75
com/mosfets/12-rated-on-res/
com/mosfets/15-rated-on-res/
VMN-PT0103-1209
SiB914
SiA427DJ
si2329ds
si8802
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PDF
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm
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Original
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Si8489EDB
Si8902AEDB
VMN-PT0107-1402
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PDF
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