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Vishay Siliconix SI8483DB-T2-E1 MOSFET P-CH 12V 16A 6MICRO FOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8483DB-T2-E1	Cut Tape	16,799		1	1 $0.82 10 $0.51 100 $0.82 1000 $0.22712 10000 $0.22712	Buy Now
	SI8483DB-T2-E1	Digi-Reel	16,799		1	1 $0.82 10 $0.51 100 $0.82 1000 $0.22712 10000 $0.22712	Buy Now
	SI8483DB-T2-E1	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.19529	Buy Now
Vishay Intertechnologies SI8483DB-T2-E1 Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8483DB-T2-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8483DB-T2-E1	Reel	51,000	6 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.14981	Buy Now
	SI8483DB-T2-E1	Ammo Pack		16 Weeks, 5 Days	1	1 $0.572 10 $0.469 100 $0.347 1000 $0.347 10000 $0.347	Buy Now
	SI8483DB-T2-E1	Ammo Pack		17 Weeks, 3 Days	1	1 $0.54 10 $0.437 100 $0.315 1000 $0.315 10000 $0.315	Buy Now
Mouser Electronics	SI8483DB-T2-E1		46,499			1 $0.55 10 $0.398 100 $0.297 1000 $0.219 10000 $0.157	Buy Now
Newark	SI8483DB-T2-E1	Cut Tape	3,773		1	1 $0.059 10 $0.059 100 $0.059 1000 $0.059 10000 $0.059	Buy Now
	SI8483DB-T2-E1	Cut Tape	3,000		1	1 $0.144 10 $0.144 100 $0.144 1000 $0.144 10000 $0.144	Buy Now
	SI8483DB-T2-E1	Reel			1	1 $0.215 10 $0.215 100 $0.215 1000 $0.215 10000 $0.194	Buy Now
TTI	SI8483DB-T2-E1	Reel	105,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.158	Buy Now
Avnet Asia	SI8483DB-T2-E1			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.25123	Buy Now

EBV Elektronik	SI8483DB-T2-E1			7 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI8483DB-T2-E1. Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv; Power Dissipation:13W; No. Of Pins:6Pins Rohs Compliant: No \|Vishay SI8483DB-T2-E1.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI8483DB-T2-E1.	Reel			3,000	1 $0.153 10 $0.153 100 $0.153 1000 $0.153 10000 $0.153	Buy Now
Vishay Huntington SI8483DB-T2-E1 MOSFET P-CH 12V 16A 6MICRO FOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SI8483DB-T2-E1		324,000			1 - 10 - 100 - 1000 $0.1937 10000 $0.1624	Buy Now

SI8483DB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI8483DB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 16A MICROFOOT		Original	PDF

SI8483DB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si8483DB Abstract: Si8483DB-T2-E1 si8483 Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) (Max.) ID (A)e 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 VDS (V) - 12 Qg (Typ.) 21 nC APPLICATIONS	Original	Si8483DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si8483DB-T2-E1 si8483	PDF
A8483 Abstract: No abstract text available Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 e RDS(on) () (Max.) ID (A) 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 Qg (Typ.) 21 nC S • Load Switch for Smart Phones, Tablet PCs, and Mobile	Original	Si8483DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 A8483	PDF
Si8483DB Abstract: No abstract text available Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) (Max.) ID (A)e 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 VDS (V) - 12 Qg (Typ.) 21 nC APPLICATIONS	Original	Si8483DB 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MSOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si8483DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 RDS(on) () (MAX.) ID (A) e 0.026 at VGS = -4.5 V -16 0.035 at VGS = -2.5 V -16 0.055 at VGS = -1.8 V -13 0.092 at VGS = -1.5 V -2.5 MICRO FOOT 1.5 x 1	Original	Si8483DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si8483DB Abstract: No abstract text available Text: SPICE Device Model Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MSOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si8483DB 11-Mar-11	PDF
SI-8100D Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,	Original	Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402	PDF
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,	Original	1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406	PDF
Si7141 Abstract: SiA447DJ SI7615A Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm	Original	Si8489EDB Si8902AEDB VMN-PT0107-1402	PDF

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SI8483DB Price and Stock

Vishay Siliconix SI8483DB-T2-E1

Vishay Intertechnologies SI8483DB-T2-E1

Vishay Intertechnologies SI8483DB-T2-E1.

Vishay Huntington SI8483DB-T2-E1

SI8483DB Datasheets (1)

SI8483DB Datasheets Context Search

Si8483DB

A8483

Si8483DB

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Si8483DB

SI-8100D

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Si7141

si7121

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