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    Vishay Siliconix SIR166DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
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    DigiKey SIR166DP-T1-GE3 Cut Tape 2,390 1
    • 1 $1.65
    • 10 $1.114
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    • 1000 $0.59079
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    SIR166DP-T1-GE3 Digi-Reel 2,390 1
    • 1 $1.65
    • 10 $1.114
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    • 1000 $0.59079
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    SIR166DP-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SIR166DP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR166DP-T1-GE3)
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    Avnet Americas SIR166DP-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SIR166DP-T1-GE3 1,471
    • 1 $1.44
    • 10 $1.12
    • 100 $0.785
    • 1000 $0.59
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    Newark SIR166DP-T1-GE3 Reel 3,000
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    TTI SIR166DP-T1-GE3 Reel 6,000 3,000
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    TME SIR166DP-T1-GE3 3,000
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    Chip 1 Exchange SIR166DP-T1-GE3 2,578
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    EBV Elektronik SIR166DP-T1-GE3 18 Weeks 3,000
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    SIR166 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR166DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 8-SOIC Original PDF

    SIR166 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sir166

    Abstract: 4558 m 4558 4558 C AN609 305510
    Text: SiR166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR166DP AN609, 11-Jan-10 sir166 4558 m 4558 4558 C AN609 305510

    sir166

    Abstract: d 2092 SIR166DP v3320
    Text: SPICE Device Model SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR166DP 18-Jul-08 sir166 d 2092 v3320

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR166DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR166DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sir166

    Abstract: SiR166DP
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 sir166

    sir166

    Abstract: 65471 sir166dp
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 18-Jul-08 sir166 65471

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Peripherals One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Peripherals GPU Graphic Cards 4 Wireless Charging 5 Printers 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		PDF VMN-MS6761-1212

    WSK0612

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Peripherals One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer コンピューター周辺機器 GPUグラフィックカード 4 ワイヤレス充電 5


    Original     		PDF VMN-MS6792-1304-COCP WSK0612