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Vishay Siliconix SIR166DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIR166DP-T1-GE3	Digi-Reel	2,380		1	1 $2.04 10 $1.303 100 $2.04 1000 $0.64246 10000 $0.64246	Buy Now
	SIR166DP-T1-GE3	Cut Tape	2,380		1	1 $2.04 10 $1.303 100 $2.04 1000 $0.64246 10000 $0.64246	Buy Now
	SIR166DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.54	Buy Now
Vishay Intertechnologies SIR166DP-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR166DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIR166DP-T1-GE3	Reel		21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.57525	Buy Now
Mouser Electronics	SIR166DP-T1-GE3		1,471			1 $1.44 10 $1.12 100 $0.785 1000 $0.59 10000 $0.54	Buy Now
Newark	SIR166DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.575	Buy Now
TTI	SIR166DP-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.54	Buy Now
TME	SIR166DP-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.84	Get Quote

Chip 1 Exchange	SIR166DP-T1-GE3		2,578			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIR166DP-T1-GE3			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIR166DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR166DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 8-SOIC		Original	PDF

SIR166DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
sir166 Abstract: 4558 m 4558 4558 C AN609 305510 Text: SiR166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiR166DP AN609, 11-Jan-10 sir166 4558 m 4558 4558 C AN609 305510	PDF
sir166 Abstract: d 2092 SIR166DP v3320 Text: SPICE Device Model SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR166DP 18-Jul-08 sir166 d 2092 v3320	PDF
Untitled Abstract: No abstract text available Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR166DP 2002/95/EC SiR166DP-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiR166DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR166DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
sir166 Abstract: SiR166DP Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 sir166	PDF
sir166 Abstract: 65471 sir166dp Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR166DP 2002/95/EC SiR166DP-T1-GE3 18-Jul-08 sir166 65471	PDF
Untitled Abstract: No abstract text available Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Computer Peripherals One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Peripherals GPU Graphic Cards 4 Wireless Charging 5 Printers 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay	Original	VMN-MS6761-1212	PDF
WSK0612 Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Computer Peripherals One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer コンピューター周辺機器 GPUグラフィックカード 4 ワイヤレス充電 5	Original	VMN-MS6792-1304-COCP WSK0612	PDF