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    05D2501 Search Results

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    05D2501 Price and Stock

    Samtec Inc FFSD-05-D-25.01-01-N

    Cable Assembly Flat 0.635m 30AWG 10 POS IDC Connector to 10 POS IDC Connector SKT-SKT IDT-IDT Bulk - Bulk (Alt: FFSD-05-D-25.01-01-N)
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    Avnet Americas FFSD-05-D-25.01-01-N Bulk 1
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    Master Electronics FFSD-05-D-25.01-01-N
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    Sager FFSD-05-D-25.01-01-N
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    05D2501 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters


    Original     		05D2501 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 2500 IFAVM = 490 IFRMS = 770 IFSM = 8.5 VF0 = 1.40 rF = 0.52 VDClink = 1100 V A A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 July 98 Features •Patented free-floating silicon technology •Low switching losses


    Original     		05D2501 CH-5600 PDF

    KA 490

    Abstract: 85103 DIODE
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5x103 1.4 0.52 1100 V A A V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Jan. 03 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO


    Original     		05D2501 5SYA1112-03 CH-5600 KA 490 85103 DIODE PDF

    ABB Semiconductors

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters


    Original     		05D2501 5SYA1112-03 CH-5600 ABB Semiconductors PDF

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan     		01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031 PDF

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan     		15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502 PDF

    FSV 052

    Abstract: No abstract text available
    Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.


    OCR Scan     		05D2505 11F2501 07F4501 13H4501 5SDF14H4505 10H6004 01R2501 01R2502 01R2503 01R2504 FSV 052 PDF