Untitled
Abstract: No abstract text available
Text: 7 ^ 2 3 7 0D4L50L4 f l t. 3 •SGTH SGS-THOMSON ¡LiOT s«S ¡5 7 STP50N06L 06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP 50N 06L STP50N 06LFI V dss R d s ( o ii Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■ TYPICAL RDS(on) = 0.024 Q
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0D4L50L4
STP50N06L
STP50N06LFI
STP50N
06LFI
QCmb510
STP50N06L/FI
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Untitled
Abstract: No abstract text available
Text: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L 06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q
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D0MbS32
STP55N06L
STP55N06LFI
STP55N
06LFI
7T2T537
D04b53fl
STP55N06L/FI
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Untitled
Abstract: No abstract text available
Text: S G S - T H O M ¿ 5 STP32N06L 06LFI S O N ¡mera « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP32N 06L STP32N 06LFI V dss RDS on Id 60 V 60 V < 0 .055 Q. < 0 .055 Q. 32 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY
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STP32N06L
STP32N06LFI
TP32N
STP32N
06LFI
STP36N06L/FI
ISQWATT220
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STP21N06L
Abstract: No abstract text available
Text: £jï 21 06 21 06 SGS-THOMSON ¡mora « STP N L STP N LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TP21N 06L STP21 N 06LFI V dss RDS on Id 60 V 60 V < 0 .0 8 5 Q. < 0 .0 8 5 Q. 21 A 14 A • TYPICAL R D S (on) = 0.065 £2
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TP21N
STP21
06LFI
STP21N06L
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06LFI
Abstract: No abstract text available
Text: £ j 15 06 15 06 SGS-THOMSON ï ULKgraMOeS STP N L STP N LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP15N 06L STP15N 06LFI V dss RDS on Id 60 V 60 V < 0 .1 5 Q. < 0 .1 5 Q. 15 A 10 A . Q . . TYPICAL RDs(on) = 0.115 AVALANCHE RUGGED TECHNOLOGY
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TP15N
STP15N
06LFI
06LFI
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TP50N
Abstract: No abstract text available
Text: £ j ï STP50N06L S T P 5 0 N 0 6 LFI SGS-THOMSON ULKgraMOeS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TP50N 06L STP50N 06LFI . . . . . . . . . V dss RDS on Id 60 V 60 V < 0.0 2 8 Q. < 0.0 2 8 Q. 50 A 27 A TYPICAL R DS(on) = 0.024 Q.
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STP50N06L
TP50N
STP50N
06LFI
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON iL iO M K I stp32N06L 06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N 06LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y
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32N06L
STP32N06LFI
STP32N06L
STP32N
06LFI
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a2039
Abstract: STP55N06L STP55N06LFI dc motor forward reverse control C5530
Text: •i 7^5^237 7 7 V # 00MbS3 E 72Ô ■ S G T H _ S G S -T H O M S O N M g^ IH[l T^MO(gS STP55N06 L S T P 5 5 N 0 6 LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V STP55N 06L STP55N 06LFI dss 60 V 60 V Id
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00MbS3E
STP55N06L
STP55N06LFI
STP55N06L
STP55N06LFI
7T2T237
D04b53fl
STP55N06L/FI
SC059
a2039
dc motor forward reverse control
C5530
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Untitled
Abstract: No abstract text available
Text: 772cì537 004b3S0 *ïfll • SGTH 15 06 15 06 SGS-THOMSON H O T «! STP N L STP N LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP15N 06L STP15N 06LFI 60 V 60 V R d S oii < 0.15 < 0.15 n n Id 15 A 10 A . TYPICAL RDS(on) = 0.115 Q
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004b3S0
TP15N
STP15N
06LFI
STP15N06L/FI
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L 06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STP36N
TP36N05LFI
STP36N06L
STP36N06LFI
STP36N06L/FI
ISQWATT220
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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tp40n
Abstract: No abstract text available
Text: STP40N06L 06LFI SCS-THOMSON |[iJOT *§ N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ADVANCE DATA TYPE . . . . . . • . . d ss R D S o n Id 60 V 60 V 0.04 i l 0.04 £2 40 A 22 A V S TP40N 06L S 06LFI AVALANCHE RUG G EDN ESS TECHNOLO GY
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STP40N06L
STP40N06LFI
TP40N
TP40N06LFI
O-220
ISOWATT220
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Untitled
Abstract: No abstract text available
Text: * 5 SGS-THOMSON ¡[LKgraMOeS 7 STP19N06L 06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STP19N 06L S 06LFI V dss RDS on Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . . AVALANCHE RUGGED TECHNOLOGY
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STP19N06L
STP19N06LFI
STP19N
TP19N06LFI
O-220
ISOWATT22Q
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Untitled
Abstract: No abstract text available
Text: 7 ^ 2 3 7 00^312 330 H S 6 T H STP21N06L 06LFI SGS-THOMSON iL[i gra*S N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOSTRANSISTOR TYPE STP21N06L STP21NQ6LFI V dss R d S(o ii Id 60 V 60 V < 0.085 £2 < 0.085 n 21 A 14 A • T Y P IC A L R Ds(on) = 0 .0 6 5 £2
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STP21N06L
STP21N06LFI
STP21NQ6LFI
STP21N06L/FI
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Untitled
Abstract: No abstract text available
Text: 55 06 55 06 SGS-THOMSON £ j ï STP N L STP N LFI ULKgraMOeS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STP55N06L 06LFI V dss RDS on Id 60 V 60 V < 0 . 0 2 3 Q. < 0 . 0 2 3 Q. 55 A 30 A TYPICAL R D S (on) = 0.02 £2 . AVALANCHE RUGGED TECHNOLOGY
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STP55N06L
STP55N06LFI
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