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    STP55N06LFI Search Results

    STP55N06LFI Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STP55N06LFI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP55N06LFI STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistors Scan PDF

    STP55N06LFI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP55N06L

    Abstract: STP55N06LFI STP55N06LFI morocco
    Text: STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP55N06L STP55N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.023 Ω < 0.023 Ω 55 A 30 A TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY


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    PDF STP55N06L STP55N06LFI 100oC STP55N06L STP55N06LFI STP55N06LFI morocco

    Untitled

    Abstract: No abstract text available
    Text: STP55N06LFI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)30# I(DM) Max. (A) Pulsed I(D)21 @Temp (øC)100# IDM Max (@25øC Amb)220 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45# Minimum Operating Temp (øC)


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    PDF STP55N06LFI

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q


    OCR Scan
    PDF D0MbS32 STP55N06L STP55N06LFI STP55N 06LFI 7T2T537 D04b53fl STP55N06L/FI

    Untitled

    Abstract: No abstract text available
    Text: 55 06 55 06 SGS-THOMSON £ j ï STP N L STP N LFI ULKgraMOeS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STP55N06L STP55N06LFI V dss RDS on Id 60 V 60 V < 0 . 0 2 3 Q. < 0 . 0 2 3 Q. 55 A 30 A TYPICAL R D S (on) = 0.02 £2 . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan
    PDF STP55N06L STP55N06LFI