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    06CN Search Results

    06CN Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    R5F36506CNFA#V0 Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), QFP, / Visit Renesas Electronics Corporation
    R5F36406CNFA#V0 Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion) Visit Renesas Electronics Corporation
    R5F36406CNFB#30 Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion) Visit Renesas Electronics Corporation
    R5F36506CNFB#30 Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion) Visit Renesas Electronics Corporation
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    06CN Price and Stock

    XtalTQ Technology BT0503CH3I106CN25

    TCXO 5032-6PADS 25MHZ CMOS 3.3
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    DigiKey BT0503CH3I106CN25 510 1
    • 1 $8.16
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    • 100 $6.0918
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    Analog Devices Inc LT1006CN8-PBF

    IC OPAMP GP 1 CIRCUIT 8DIP
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    DigiKey LT1006CN8-PBF Tube 486 1
    • 1 $6.81
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    • 100 $3.424
    • 1000 $2.77281
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    Analog Devices Inc LT1206CN8-PBF

    IC OPAMP CFA 1 CIRCUIT 8DIP
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    DigiKey LT1206CN8-PBF Tube 232 1
    • 1 $13.39
    • 10 $9.48
    • 100 $7.35
    • 1000 $6.275
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    Pulse Electronics Corporation PH0806CNL

    XFMR DC/DC CONV SMD
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    DigiKey PH0806CNL Tray 203 1
    • 1 $9.93
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    Pulse Electronics Corporation PH0806CNLT

    XFMR DC/DC CONV SMD
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    DigiKey PH0806CNLT Cut Tape 147 1
    • 1 $10.32
    • 10 $8.316
    • 100 $7.447
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    PH0806CNLT Digi-Reel 147 1
    • 1 $10.32
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    Avnet Americas PH0806CNLT Reel 15 Weeks 300
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    Newark PH0806CNLT Reel 300
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    Master Electronics PH0806CNLT 300
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    06CN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J 6920 A

    Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A J 6920 06CN10N JESD22 PG-TO220-3

    06CNE8N

    Abstract: No abstract text available
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 6.2 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N

    IEC61249-2-21

    Abstract: IPP06CNE8N JESD22 PG-TO220-3
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3

    06cn10n

    Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N 06cn10n J 6920 A J 6920 mJ 6920 JESD22 PG-TO220-3 IPP06CN10NG

    06CN10L

    Abstract: JESD22 PG-TO220-3
    Text: 06CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 6.2 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    PDF IPP06CN10L PG-TO220-3 06CN10L 06CN10L JESD22 PG-TO220-3

    06cn10n

    Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 06cn10n 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3

    06CNE8N

    Abstract: No abstract text available
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3 06CNE8N
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3 06CNE8N

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original
    PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    06CN10N

    Abstract: IPP06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CN10N IPI06CN10N IPP06CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG

    J 6920 A

    Abstract: ds 1-08 diode J 6920 06cn10n IPP06CN10N JESD22 PG-TO220-3
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A ds 1-08 diode J 6920 06cn10n JESD22 PG-TO220-3

    J 6920

    Abstract: J 6920 A
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 J 6920 J 6920 A