material declaration semiconductor package
Abstract: asbestos safety material declaration vishay 89901 DO-219AB 58018
Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their
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LLP-75
06-May-04
material declaration semiconductor package
asbestos safety
material declaration vishay
89901
DO-219AB
58018
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CAT5251
Abstract: CAT5251WI-00 CAT5251WI-50 CAT5251WI-50-T1 CAT5251YI-00 CAT5251YI-50 MS-013
Text: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION Four linear-taper digitally programmable potentiometers 254 resistor taps per potentiometer End to end resistance 50kΩ or 100kΩ Potentiometer control and memory access via
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CAT5251
24-lead
24-lead
CAT5251
MD-2017
CAT5251WI-00
CAT5251WI-50
CAT5251WI-50-T1
CAT5251YI-00
CAT5251YI-50
MS-013
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PDF
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Vishay nobel
Abstract: nobel 420 excitation 10v vishay RELAY IP-65 by 228 PH
Text: WIN 3 Vishay Nobel Transducers Weight Indicator FEATURES ∑ Housed in a box of rigid stainless steel ∑ Three different levels can be monitored ∑ Pre-set level values can be shown ∑ Computer communication via interfaces RS-232 or RS-485 DESCRIPTION The integrity of the weight value is guaranteed by automatic
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RS-232
RS-485
IP-65
08-Apr-05
Vishay nobel
nobel 420
excitation 10v
vishay RELAY
by 228 PH
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PDF
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tk 100 A
Abstract: No abstract text available
Text: TSMS3700 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in SMT Package Description TSMS3700 is a standard GaAs infrared emitting diode in a miniature PL-CC-2 package. Its flat window provides a wide aperture, making it ideal for use with external optics.
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TSMS3700
TSMS3700
TEMT3700
D-74025
06-May-04
tk 100 A
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PDF
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TSUS4400
Abstract: No abstract text available
Text: TSUS4400 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in ∅ 3 mm T-1 Package Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
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TSUS4400
TSUS4400
D-74025
06-May-04
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TSMG3700
Abstract: TSMG3700-GS08
Text: TSMG3700 VISHAY Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMG3700
TSMG3700
D-74025
06-May-04
TSMG3700-GS08
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Untitled
Abstract: No abstract text available
Text: TSTA7300 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high
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TSTA7300
TSTA7300
D-74025
06-May-04
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PDF
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Untitled
Abstract: No abstract text available
Text: TSSS2600 VISHAY Vishay Semiconductors GaAs IR Emitting Diode in Side View Miniature Package Description TSSS2600 is a miniature infrared emitting diode in GaAs on GaAs technology, molded in a clear, untinted plastic package with cylindrical side view lens.
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TSSS2600
TSSS2600
D-74025
06-May-04
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Untitled
Abstract: No abstract text available
Text: TSUS520. VISHAY Vishay Semiconductors GaAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description TSUS520. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are
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TSUS520.
D-74025
06-May-04
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Untitled
Abstract: No abstract text available
Text: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package. Features • • • • • SMT IRED with extra high radiant power
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TSML3710
TSML3710
TEMT3700
D-74025
06-May-04
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PDF
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Untitled
Abstract: No abstract text available
Text: TSTA7100 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very
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TSTA7100
TSTA7100
D-74025
06-May-04
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PDF
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40039
Abstract: SOD-523 DO-219AB Germanium DO-35 DIODE 89901 cd 4553 material declaration vishay asbestos DO-219AB germanium diode SOD323
Text: VISHAY Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their
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Original
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LLP-75
06-May-04
40039
SOD-523 DO-219AB
Germanium DO-35 DIODE
89901
cd 4553
material declaration vishay
asbestos
DO-219AB
germanium diode SOD323
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PDF
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CAT5251
Abstract: CAT5251WI-00-T1 CAT5251WI50 CAT5251WI-50-T1 CAT5251YI-00-T2 CAT5251YI-50-T2 MS-013
Text: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION Four linear-taper digitally programmable potentiometers 254 resistor taps per potentiometer End to end resistance 50 kΩ or 100 kΩ Potentiometer control and memory access via
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Original
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CAT5251
24-lead
24-lead
CAT5251
MD-2017
CAT5251WI-00-T1
CAT5251WI50
CAT5251WI-50-T1
CAT5251YI-00-T2
CAT5251YI-50-T2
MS-013
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PDF
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GaAs 1040 nm
Abstract: No abstract text available
Text: TSML1000/1020/1030/1040 VISHAY Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000/1020/1030/1040
TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
D-74025
06-May-04
GaAs 1040 nm
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Untitled
Abstract: No abstract text available
Text: TSTA7500 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it
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TSTA7500
TSTA7500
D-74025
06-May-04
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PDF
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CAT5251
Abstract: CAT5251WI-00-T1 CAT5251WI50 CAT5251WI-50-T1 CAT5251YI-00-T2 CAT5251YI-50-T2 MS-013
Text: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION Four linear-taper digitally programmable potentiometers 254 resistor taps per potentiometer End to end resistance 50 kΩ or 100 kΩ Potentiometer control and memory access via
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Original
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CAT5251
24-lead
24-lead
CAT5251
MD-2017
CAT5251WI-00-T1
CAT5251WI50
CAT5251WI-50-T1
CAT5251YI-00-T2
CAT5251YI-50-T2
MS-013
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PDF
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02CZ5
Abstract: DIN 16901 130
Text: THIS DRAWING IS UNPUBL1SH SHEIL TTTLIC COPYRIGHT 1996 rr> RELEASED FOR PUBLICATION FREI FUER VERQEFFENTLI CHUNG BY AMP INCORPORATED, ALLE REICHTE VORBEHALTEN mm 0 2 ÇZ5 MATED WITH: PA55END ZU: , 19-, E I-* +0 . 6 CM - CD B o o + I X a 10 6 5 ^ - 1 + 0 . 5
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PA55END
07-DEC-98
06-MAY-04
18-AUG-
08-AUG-96
31-AUG-98
VERARBEITUNG55PEZ.
02CZ5
DIN 16901 130
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PDF
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1832A
Abstract: Augat 824-AG11D Augat lsg 808-AG10D 1437537-5 0-1437540-3 832-AG38D 814-AG10D 2-1437537-1 820-AR11D-ES 7-1437539-7 1806-AG11
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. DIST 00 AD BY TYCO ELECTRONIC5 CORPORATION. REVISIONS LTR DESCRIPTION }p o o MATERIALS: INSULATOR: POLYESTER, UL RATED 9 4 V - 0 CONTACT: 8 0 0 & 1 8 00 SERIES CONTACT: 4 BEAM, COPPER ALLOY,
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07JUN04
1808-AR11
1808-AG11
1806-AG11
06may04
1832A
Augat 824-AG11D
Augat lsg
808-AG10D 1437537-5
0-1437540-3
832-AG38D
814-AG10D 2-1437537-1
820-AR11D-ES
7-1437539-7
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 T H I S DRAWING JÊL C OPYRIGHT 15 U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. , 6 4 5 2 3 19 D I ST LOC ALL R IG H T S R ES E R V E D . AD REVISIONS 39 DESCRIPTION R GOLD F L A S H OVER 0 . 0 0 1 2 7 [„000050]
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PER0G3C-0273-01
15EP01
14JAN03
06MAY04
0/10/9S
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. IF F COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS P LTR A1 A2 DESCRIPTION DATE DWN APVD ECO—08 —0261 91 230CT08 MB MM REVISED PER ECO-10- 0 0 0 4 4 4
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230CT08
ECO-10-
20JAN
R111D
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PDF
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Untitled
Abstract: No abstract text available
Text: 6 THIS DR A WI N G COPYRI GHT IS UNPUBL IS HED. 19 LABEL AS RELEASED BY AMP INCORPORATED. ALL 3 F OR P U B L I C A T I O N RIGHTS LOC DIST REVISIONS RESERVED. LTR CABLE,14 SH I E L O E O SHOWN AWG 0 0 OHM IMPEOANCE DESCRIPTION DA T E DWN A PV D RELEASE
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06MAY04
05FEB05
OB-MAY-04
usOl5872
/home/usOI5872/edmmod
PU570MER
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PDF
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tyco 17105-3608
Abstract: plc 5000 17105-3608 tyco
Text: 2 THIS £L DRAWIN G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. GP DIST R E V I S I O N S 00 LTR DESCRIPTION DATE REVISED PER E C OS I 3 - 0 2 5 3 - 0 4 REVISED PER ECO - 06 - 0 0 6 6 2 4
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COPYRIGHT20
ECO-06
I7MAY04
23MAR2006
QQ-N-290.
I3MAY03
06MAY04
06MAY04
3IMAR2000
tyco 17105-3608
plc 5000
17105-3608 tyco
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS C DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED ALL - F OR PUBLICATIO N RIGHTS 20 L OC RESERVED. GP REVISIONS DIST 00 LTR Dl DESCRIPTIO N DATE REVI SED PER ECO-I 1-004835 DWN I IMAR201 I RK APVD HMR c C .m o o o o o o — 5*. MATERIAL:
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IMAR201
QQ-N-290.
I3MAY03
06MAY04
06MAY04
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PDF
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114-13120
Abstract: No abstract text available
Text: 2 THIS C DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY - RELEASED ALL FOR PUBLICATION RIGHTS 20 LOC RESERVED. DIST GP REVISIONS 00 LTR Gl MATERIAL: 0.25 THICK COPPER V IA S REVISED PER ECO-I I- 0 0 3 3 1 9 0 1APR201 I JY CW REVISED PER E C O - 12-011010
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1APR201
3JUN2012
04JUN03
06MAY04
114-13120
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PDF
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