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    06N8 Price and Stock

    Laird, A DuPont Business HI1206N800R-10

    FERRITE BEAD 80 OHM 1206 1LN
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    DigiKey HI1206N800R-10 Cut Tape 85,008 1
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    HI1206N800R-10 Digi-Reel 85,008 1
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    HI1206N800R-10 Reel 84,000 3,000
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    Newark HI1206N800R-10 Reel 15,000 3,000
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    HI1206N800R-10 Cut Tape 8,699 10
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    Bristol Electronics HI1206N800R-10 5,653 23
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    HI1206N800R-10 1,066
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    Sager HI1206N800R-10 27,000 10,000
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    Molex 0500798000-06-N8-D

    6" PRE-CRIMP 1852 BROWN
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    DigiKey 0500798000-06-N8-D Bulk 980 10
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    Micro Commercial Components MSJP06N80A-BP

    Interface
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    DigiKey MSJP06N80A-BP Bulk 5,000
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    Walsin Technology Corporation 1206N820K100CT

    CAP CER 82PF 10V C0G/NP0 1206
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    DigiKey 1206N820K100CT Reel 4,000
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    Walsin Technology Corporation 1206N821F101CT

    CAP CER 820PF 100V C0G/NP0 1206
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    DigiKey 1206N821F101CT Reel 4,000
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    Find more 06N8 price and stock on Findchips.com

    06N8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    06n80

    Abstract: 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP06N80C3 PG-TO220-3 06N80C3 06n80 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C

    06N80C3

    Abstract: 06N80
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80

    diode 71A

    Abstract: SPA06N80C3
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated


    Original     		PDF SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3

    06n80c3

    Abstract: SPA06N80C3
    Text: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3

    SMD Transistor g15

    Abstract: transistor A25 SMD transistor SMD g15
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD transistor SMD g15

    06n80c3

    Abstract: JESD22 PG-TO220-3 SPA06N80C3
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA06N80C3 PG-TO220-3 06N80C3 06n80c3 JESD22 PG-TO220-3 SPA06N80C3

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP06N80C3 PG-TO220-3 06N80C3

    Untitled

    Abstract: No abstract text available
    Text: DATE CHECKED Jan./26/’10 REVISIONS CHECKED Jan./26/’10 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes


    Original     		PDF FMH06N80E MS5F07479 H04-004-05 H04-004-03

    06n80c3

    Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3

    06n80c3

    Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
    Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS

    06n80c3

    Abstract: P-TO252 SPD06N80C3
    Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80c3 P-TO252 SPD06N80C3

    06n80

    Abstract: Q67040-S4352 06n8 06n80c3
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω •=Periodic avalanche rated


    Original     		PDF SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80 Q67040-S4352 06n8 06n80c3

    06n80c3

    Abstract: SPP06N80C3 06n80
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω 6 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4351 06N80C3

    SMD Transistor g15

    Abstract: transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3

    06N80

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA06N80C3 PG-TO220-3 06N80C3 06N80

    TO-252

    Abstract: No abstract text available
    Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω • Periodic avalanche rated ID 6 A • Extreme dv/dt rated


    Original     		PDF SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 TO-252

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD06N80C3 PG-TO252-3 06N80C3

    06N80C3

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA06N80C3 PG-TO220-3 06N80C3 06N80C3

    smd transistor marking 12W

    Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98
    Text: Preliminary data 06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO252 · Product Summary VDS 800 V Ultra low gate charge RDS(on) 900 mW · Periodic avalanche rated


    Original     		PDF SPD06N80C2 P-TO252 Q67040-S4352 06N80C2 smd transistor marking 12W smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    SPD06N80C3

    Abstract: 06N80C3 P-TO252
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 900 mΩ ID •=Periodic avalanche rated


    Original     		PDF SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 SPD06N80C3 06N80C3 P-TO252