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    06N80C3 Price and Stock

    Infineon Technologies AG SPA06N80C3XKSA1

    MOSFET N-CH 800V 6A TO220-FP
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    DigiKey SPA06N80C3XKSA1 Tube 11,995 1
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    Mouser Electronics SPA06N80C3XKSA1 231
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    Chip1Stop SPA06N80C3XKSA1 Tube 1,244
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    Component Electronics, Inc SPA06N80C3XKSA1 1,461
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    Infineon Technologies AG SPP06N80C3XKSA1

    MOSFET N-CH 800V 6A TO220-3
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    DigiKey SPP06N80C3XKSA1 Tube 5,830 1
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    Mouser Electronics SPP06N80C3XKSA1 1,161
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    Rochester Electronics SPP06N80C3XKSA1 20,858 1
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    EBV Elektronik SPP06N80C3XKSA1 87,000 16 Weeks 500
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    New Advantage Corporation SPP06N80C3XKSA1 69,500 1
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    Infineon Technologies AG SPD06N80C3ATMA1

    MOSFET N-CH 800V 6A TO252-3
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    DigiKey SPD06N80C3ATMA1 Cut Tape 1,469 1
    • 1 $2.67
    • 10 $1.722
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    SPD06N80C3ATMA1 Digi-Reel 1,469 1
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    SPD06N80C3ATMA1 Reel 2,500
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    Avnet Americas SPD06N80C3ATMA1 Reel 2,500 15 Weeks 2,500
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    Mouser Electronics SPD06N80C3ATMA1 29,591
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    Newark SPD06N80C3ATMA1 Cut Tape 5
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    Rochester Electronics SPD06N80C3ATMA1 255 1
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    Chip1Stop SPD06N80C3ATMA1 Cut Tape 1,798
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    EBV Elektronik SPD06N80C3ATMA1 2,500 16 Weeks 2,500
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    New Advantage Corporation SPD06N80C3ATMA1 2,500 1
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    Infineon Technologies AG SPP06N80C3XK

    MOSFET N-CH 800V 6A TO220-3
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    DigiKey SPP06N80C3XK Tube
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    Infineon Technologies AG SPD06N80C3BTMA1

    MOSFET N-CH 800V 6A TO252-3
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    Chip 1 Exchange SPD06N80C3BTMA1 842
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    Win Source Electronics SPD06N80C3BTMA1 27,996
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    Find more 06N80C3 price and stock on Findchips.com

    06N80C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    06n80

    Abstract: 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP06N80C3 PG-TO220-3 06N80C3 06n80 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C

    06N80C3

    Abstract: 06N80
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80

    diode 71A

    Abstract: SPA06N80C3
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated


    Original     		PDF SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3

    06n80c3

    Abstract: SPA06N80C3
    Text: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3

    SMD Transistor g15

    Abstract: transistor A25 SMD transistor SMD g15
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD transistor SMD g15

    06n80c3

    Abstract: JESD22 PG-TO220-3 SPA06N80C3
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA06N80C3 PG-TO220-3 06N80C3 06n80c3 JESD22 PG-TO220-3 SPA06N80C3

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP06N80C3 PG-TO220-3 06N80C3

    06n80c3

    Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3

    06n80c3

    Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
    Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS

    06n80c3

    Abstract: P-TO252 SPD06N80C3
    Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80c3 P-TO252 SPD06N80C3

    06n80

    Abstract: Q67040-S4352 06n8 06n80c3
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω •=Periodic avalanche rated


    Original     		PDF SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80 Q67040-S4352 06n8 06n80c3

    06n80c3

    Abstract: SPP06N80C3 06n80
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3

    SMD Transistor g15

    Abstract: transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3

    06N80

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA06N80C3 PG-TO220-3 06N80C3 06N80

    TO-252

    Abstract: No abstract text available
    Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω • Periodic avalanche rated ID 6 A • Extreme dv/dt rated


    Original     		PDF SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 TO-252

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD06N80C3 PG-TO252-3 06N80C3

    06N80C3

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA06N80C3 PG-TO220-3 06N80C3 06N80C3

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    SPD06N80C3

    Abstract: 06N80C3 P-TO252
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 900 mΩ ID •=Periodic avalanche rated


    Original     		PDF SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 SPD06N80C3 06N80C3 P-TO252

    06N80C3

    Abstract: Q67040-S4351 SPP06N80C3
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature Product Summary •=New revolutionary high voltage technology • Ultra low gate charge •=Periodic avalanche rated VDS 800 V RDS on 900 mΩ ID • Extreme dv/dt rated


    Original     		PDF SPP06N80C3 P-TO220-3-1 Q67040-S4351 06N80C3 06N80C3 Q67040-S4351 SPP06N80C3

    06N80C3

    Abstract: No abstract text available
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06N80C3