Untitled
Abstract: No abstract text available
Text: 4 C COPYRIGHT 20 BY - 1 20 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. 2 3 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ D 24.3 D 3.0 C 3.0 2.70 4.03 2.4 18.3 C-C SECTION
|
Original
|
ECR-14-000140
07JAN2014
9AUG2012
2X20AWG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 C COPYRIGHT BY - 20 1 20 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. 2 3 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ D 24.3 D 3.0 C 3.7 2.70 4.03 3.5 18.3 8.3 C
|
Original
|
ECR-14-000140
07JAN2014
11JUL2012
2X18AWG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 BY - 2 3 1 20 LOC ES ALL RIGHTS RESERVED. REVISIONS DIST 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ 20.8 3.0 D 3.43 D 3.2 C 3.6 14.8 4.8 C-C 2.40
|
Original
|
ECR-14-000140
07JAN2014
11JUL2012
14AWG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT BY - 20 2 3 1 20 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ D 24.3 D 3.0 3.6 2.70 4.03 3.2 C C 18.3 4.7
|
Original
|
ECR-14-000140
07JAN2014
11JUL2011
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT BY - 20 2 3 1 20 LOC ES ALL RIGHTS RESERVED. REVISIONS DIST 00 P 20.8 LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ 3.0 D 3.43 D C 3.0 2.4 14.8 C 4.8 C-C 2.40
|
Original
|
ECR-14-000140
07JAN2014
20AWG
11JUL2012
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT BY - 20 2 3 1 20 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ D D 24.3 3.0 3.0 2.70 4.03 2.4 C-C SECTION C
|
Original
|
ECR-14-000140
07JAN2014
11JUL2011
20AWG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 LOC ES ALL RIGHTS RESERVED. BY - REVISIONS DIST 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ D 24.3 D 3.0 SECTION C 2.70 4.03 4.9 3.8 C-C
|
Original
|
ECR-14-000140
07JAN2014
11JUL2011
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALED1642GW 16 channel LED driver with error detection, current gain control and 12/16-bit PWM brightness control for automotive applications Datasheet - production data Description The ALED1642GW is a monolithic, low voltage, low current power 16-bit shift register designed for
|
Original
|
ALED1642GW
12/16-bit
ALED1642GW
16-bit
12/16-bit
DocID025718
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STAP08DP05 Low voltage 8-bit constant current LED sink driver with output error detection for automotive applications Datasheet - production data Description The STAP08DP05 is a monolithic, low voltage, low current power 8-bit shift register designed for LED panel displays. The STAP08DP05 contains
|
Original
|
STAP08DP05
STAP08DP05
TSSOP16
DocID024305
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ST7LITE20F2 ST7LITE25F2 ST7LITE29F2 8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, Timers, SPI Datasheet - production data Features • Memories – 8 Kbytes single voltage Flash Program memory with Read-out protection – In-circuit programming and in-application
|
Original
|
ST7LITE20F2
ST7LITE25F2
ST7LITE29F2
DIP20
DocID8349
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: M24128S-FCU 128-Kbit serial I²C bus EEPROM 4 balls CSP Datasheet - preliminary data Features • Compatible with the 400 kHz I²C protocol • Memory array: – 128 Kbits 16 Kbytes of EEPROM – Page size: 32 bytes • Supply voltage range: – 1.7 V to 5.5 V
|
Original
|
M24128S-FCU
128-Kbit
40-years
DocID025717
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALED1642GW 16 channel LED driver with error detection, current gain control and 12/16-bit PWM brightness control for automotive applications Datasheet - production data Description The ALED1642GW is a monolithic, low voltage, low current power 16-bit shift register designed for
|
Original
|
ALED1642GW
12/16-bit
ALED1642GW
16-bit
12/16-bit
DocID025718
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STAP08DP05 Low voltage 8-bit constant current LED sink driver with output error detection for automotive applications Datasheet - production data Description The STAP08DP05 is a monolithic, low voltage, low current power 8-bit shift register designed for LED panel displays. The STAP08DP05 contains
|
Original
|
STAP08DP05
STAP08DP05
TSSOP16
DocID024305
|
PDF
|
SCS400J
Abstract: No abstract text available
Text: SCS400J 0.1A , 90V Plastic-Encapsulated Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOD-923 Extremely High Switching Speed Low Reverse Leakage Current High Reliability
|
Original
|
SCS400J
OD-923
OD-923
100mA
07-Jan-2014
SCS400J
|
PDF
|