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    Abstract: No abstract text available
    Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 PDF

    Untitled

    Abstract: No abstract text available
    Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K K A K TO-220AC STPSC4H065D K A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		STPSC4H065 O-220AC STPSC4H065D DocID023598 PDF