07MAY07 Search Results

HDMI CONNECTOR SMT

Abstract: EIA-364-31 HDMI CONNECTOR dip "HDMI connector"
Contextual Info: HDMI CONNECTOR 認定試験報告書 Qualification Test Report ５０１－５６４０－２ 07May07’ Rev.A1 1. はじめに 1.1 目 的 本試験はHDMI コネクタ の、設計目標書 108-78180 Rev.A1 に規定された性能必要条件に合致しているか確

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. RELEASED BY C O P Y R I G HT 2 0 TYCO ELECTRONICS CORPORATION. F OR ALL 20 PUBLICATION R 1G H T S R E V I S IO N S LOC RESERVED. LTR DESCR I PTION -SEE 35 REF W □ ADD " - 2 " NO SLIT ADD LONG LEVER TYPE APVD F J 0 0 - 2386 -Û I

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

marking 3bw

Abstract: 3BZ marking 3KASMC43 3KASMC10 marking 3Bk 3bm -3.3 3KASMC18A 3KASMC24A 3KASMC28A transistor 3bw
Contextual Info: New Product 3KASMC10 thru 3KASMC43A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR construction • Available in Unidirectional polarity only

bel 188 transistor

Abstract: smcj 214 ghk gez F SMCJ5.0A JESD22-B102D J-STD-002B SMCJ10 SMCJ188CA marking code BFK 94 vishay smcj
Contextual Info: SMCJ5.0 thru SMCJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

pure sinus inverter circuit diagram

Abstract: 3 phase motor soft starter circuit diagram ST7FLI19BF1U6 ATIC 64 soft starter for single phase induction motor JRC 5002 16 PIN PIR SENSOR IC PINOUT 702 TRANSISTOR smd 702 Z TRANSISTOR smd c02 sensor
Contextual Info: ST7LITE1xB 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI Memories – up to 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/

Contextual Info: TEMD6010FX01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC-Q101 Released Description TEMD6010FX01 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. It’s

JESD22-B102D

Abstract: J-STD-002B P4SMA10A P4SMA10CA P4SMA11A
Contextual Info: P4SMA Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional 400 W

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

74670

Abstract: AN830 Si7884DP
Contextual Info: AN830 Vishay Siliconix Current Ratings for Vishay Siliconix MOSFETs By Spiro Zefferys and Dave MacDonald SUMMARY Vishay uses three approaches in providing the continuous drain current ID rating for its MOSFETs. The values are printed in the "Absolute Maximum Ratings" table on the first

74307

Abstract: mosfet 4468 4484 AN609 Si4413ADY 112562
Contextual Info: Si4413ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

TEMD5110

Abstract: TEMD5110X01
Contextual Info: TEMD5110X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC-Q101 Released Description TEMD5110X01 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 7.5 mm2

mosfet

Abstract: RthJA rthjc 74049 mosfet t 55
Contextual Info: AN830 Vishay Siliconix Vishay Siliconix MOSFET 的额定电流 作者：Spiro Zefferys 和 Dave MacDonald 摘要 Vishay 采用三种方式确定 MOSFET 的连续漏极电流（ID）额 定值。这些值记录在数据表第一页的 “绝对最大额定值”表

TAG 280 800

Abstract: VLMW41 CIE1931
Contextual Info: VLMW41. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • High efficient InGaN technology • Chromaticity coordinate categorized according to CIE1931 per packing unit e3 • Typical color temperature 5500 K • EIA and ICE standard package • Compatible with reflow, vapor phase and wave

si4456

Abstract: 9221 AN609 Si4456DY
Contextual Info: Si4456DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74671

Abstract: 1.6722 8114 AN609 Si3865BDV n mosfet pspice parameters
Contextual Info: Si3865BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SC-89

Abstract: Si1016X Si1016X-T1 Si1016X-T1-E3
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 rDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V

74672

Abstract: 11851 AN609 Si4330DY
Contextual Info: Si4330DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74677

Abstract: 4446 8809 an 7073 AN609 Si4450DY
Contextual Info: Si4450DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

TEMD5110

Abstract: smd led 5060 datasheet TEMD5010 led smd 5060 TEMD5010X01
Contextual Info: TEMD5010X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC-Q101 Released Description TEMD5010X01 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 7.5 mm2

SC75

Contextual Info: New Product SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 ID (A)a, f 0.087 at VGS = - 10 V -9 0.158 at VGS = - 4.5 V - 7.2 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC75 Package

SiB911DK

Abstract: SC75 SiB911DK-T1-E3
Contextual Info: New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.295 at VGS = - 4.5 V - 2.6 0.420 at VGS = - 2.5 V - 2.2 0.560 at VGS = - 1.8 V - 1.9 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

RESISTOR 2322 VISHAY

Abstract: 202E VR68 c 4242
Contextual Info: VR68 Vishay BCcomponents High Ohmic up to 68 MΩ /High Voltage (up to 10 kV) Resistors FEATURES • Lead (Pb)-free solder contacts A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned electrolytic copper wires are welded to the

SC-70-6

Contextual Info: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) rDS(on) (Ω) 20 • LITTLE FOOT Plus Schottky Power MOSFET