ST M48T02
Abstract: No abstract text available
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
ST M48T02
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR TSMB1005 thru TSMB1027 Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 50 to 270 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 300 @
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TSMB1005
TSMB1027
10/1000us
8/20us
07-May-2001,
KSWB01
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR TB0640L thru TB3500L Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 30 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 30A @ 10/1000us or 150A
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TB0640L
TB3500L
10/1000us
8/20us
07-May-2001,
KSWB05
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e3 2410
Abstract: DS1642 M48T02 M48T12 14-MAY-2001
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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PDF
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
e3 2410
DS1642
M48T02
M48T12
14-MAY-2001
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DS1642
Abstract: M48T02 M48T12
Text: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds ■
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Original
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PDF
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
DS1642
M48T02
M48T12
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TL1300M
Abstract: TL2300M TL0720
Text: LITE-ON SEMICONDUCTOR TL0640M thru TL3500M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 50 Amperes VDRM IPP FEATURES DO-15 Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A
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PDF
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TL0640M
TL3500M
10/1000us
8/20us
DO-15
DO-15
07-May-2001,
KDWD04
TL1300M
TL2300M
TL0720
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MB91F364G
Abstract: 1f t sot-88 AEQ32091A FR30 MB91360 MB91FV360GA BGR16 code Ssm Transistor ya pK1 TRANSISTOR MBM29LV400C
Text: FUJITSU SEMICONDUCTOR FR50 32-BIT MICROCONTROLLER MB91F364G Short specification Release 4.2 05-Aug-2002 Fujitsu Ref. AEQ32091A FUJITSU MICROELECTRONICS EUROPE GmbH European Microcontroller Design Centre EMDC Am Siebenstein 6 D-63303 Dreieich-Buchschlag Fujitsu, EMDC
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32-BIT
MB91F364G
05-Aug-2002
AEQ32091A
D-63303
MB91F364G
0x000FFC00)
0x00FFC00.
1f t sot-88
AEQ32091A
FR30
MB91360
MB91FV360GA
BGR16
code Ssm Transistor ya
pK1 TRANSISTOR
MBM29LV400C
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TL1300L
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR TL0640L thru TL3500L Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 30 Amperes VDRM IPP FEATURES DO-15 Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 30A @10/1000us or 150A
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Original
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PDF
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TL0640L
TL3500L
10/1000us
8/20us
DO-15
DO-15
07-May-2001,
KDWD03
TL1300L
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MB91F364G
Abstract: AEQ32091 FR30 MB91360 MB91FV360GA FPT-120P-M21
Text: FUJITSU SEMICONDUCTOR FR50 32-BIT MICROCONTROLLER MB91F364G Short specification Release 1.6 6-Nov-2001 Fujitsu Ref. AEQ32091 FUJITSU MICROELECTRONICS EUROPE GmbH European Microcontroller Design Centre EMDC Am Siebenstein 6 D-63303 Dreieich-Buchschlag Fujitsu, EMDC
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Original
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PDF
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32-BIT
MB91F364G
6-Nov-2001
AEQ32091
D-63303
MB91F364G
MB91FV360GA
MB91F364G.
FPT-120P-M21
AEQ32091
FR30
MB91360
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GR-1089-CORE
Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB3500H
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @
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Original
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PDF
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TB0640H
TB3500H
10/1000us
8/20us
07-May-2001,
KSWB04
GR-1089-CORE
TB0720H
TB0900H
TB1100H
TB1300H
TB3500H
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M48T02
Abstract: STMicroelectronics
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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PDF
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M48T02
M48T12
M48T02:
M48T12:
STMicroelectronics
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR TB0640M thru TB3500M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 50 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A
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Original
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PDF
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TB0640M
TB3500M
10/1000us
8/20us
07-May-2001,
KSWB06
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DS1642
Abstract: M48T02 M48T12 AN-924
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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PDF
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
DS1642
M48T02
M48T12
AN-924
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Untitled
Abstract: No abstract text available
Text: THIS C D R A WI N G IS UNPUBLISHED. C O P Y R I G H T 20 BY - RELEASED ALL FOR PUBLICATION RI GHTS 20 LOC REVISIONS DIST FT R ES ERVED. LTR DESCRIPTION REVISED B2 RETAINER, MA T E R I AL : SEAL, I REQD. THERMOPLAST I C , 7 PER DATE E C O - 1 1- 0 0 5 0 2 7
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18MAR201
07MAY2001
I2JUN2003
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