07NOV2 Search Results

Contextual Info: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS FOR ALL CORPORATION 20 PUBLICATION RIGHTS LOC D IS T REV I S IONS FT RESERVED. LTR DESCRIPTION 0 G 3 B - 0 I 19-01 SUITABLE 0 . 5 ± 0 . I 00 -C l. . 2 07NOV200I MATERIALS AND FINISH

Contextual Info: TH I S DRAW I NG IS UNPUBLI S HE D. RELEASED BY C O P Y RI G HT 20 TYCO ELECTRONICS F OR CORPORATION. ALL PUBLICATION R 1G H T S 20 L OC RESERVED. D I ST PT R E V LTR I S I O N S DESCRIPTION DATE DWN APVD RELEASED R E V I S E D PER 0 G 3 B - 0 I 19- 01 12NOV2Û Û I

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Contextual Info: TH I S DRAW I NG IS UNPUBL IS H E D . C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION ALL FOR 20 P I J B L I C A T I ON RIGHTS REV I S IONS RESERVED. DESCRIPTION REVISED EC O G 3 B - 0 2 I 7 - 0 3 REVISED E CO- 0 5 - 0 0 7 2 47 26MAR2003 OR

DFN8 2X2

Abstract: IN414 TSV634 TSV632 marking K111 tssop14 st automotive
Contextual Info: TSV632, TSV632A, TSV633, TSV633A TSV634, TSV634A, TSV635, TSV635A Dual and quad rail-to-rail input/output 60 µA 880 kHz operational amplifiers Features • Rail-to-rail input and output ■ Low power consumption: 60 µA typ at 5 V ■ Low supply voltage: 1.5 V - 5.5 V

Contextual Info: 2 THIS £L DRAWIN G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 19 LOC CM RESERVED. R E V I SIONS DIST 00 LTR 040.13 /4 [ I .580] 1.86-2.74 J [ . 0 7 3 - . I 08] L r DESCRIPTION DATE DWN APVD

SSE12N65SL

Abstract: MosFET
Contextual Info: SSE12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

Contextual Info: TH I S DRAW ING IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS FOR CORPORATION. ALL PUBLICATION R 1G H T S 20 LOC PT RESERVED. REV I S IONS D I ST LTR DESCRIPTION DATE DWN APVD RELEASED REVISED PER 0 G 3 B - 0 I 19-01 12 N O V 2 Û Û I

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

PoE adapter circuit diagrams

Abstract: PM8803 "power sourcing equipment"
Contextual Info: PM8803 High-efficiency, IEEE 802.3at compliant integrated PoE-PD interface and PWM controller Datasheet − production data Features • IEEE 802.3at compliant PD interface ■ Works with power supplied from Ethernet LAN cables or from local auxiliary sources

TSV99x

Abstract: TSV91 TSV991A K149
Contextual Info: TSV991, TSV992, TSV994, TSV991A, TSV992A, TSV994A Rail-to-rail input/output 20 MHz GBP operational amplifiers Datasheet − production data Features • Low input offset voltage: 1.5 mV max A grade ■ Rail-to-rail input and output ■ Wide bandwidth 20 MHz

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STFI34NM60N N-channel 600 V, 0.092 Ω, 31.5 A MDmesh II Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code VDSS RDS on ID PTOT STFI34NM60N 600 V 0.105 Ω 31.5 A 40 W • 100% avalanche tested • Low input capacitance and gate charge

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

IS1651

Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: STV2310 Multistandard TV digital video decoder with adaptive comb filter and RGB/YCrCb input Features • Worldwide TV Standards Compatible ■ Automatic NTSC/PAL/SECAM Digital Chroma Decoder ■ NTSC/PAL Adaptive 4H/2D Comb Filter ■ VBI Data Slicer for Teletext, Closed Caption,

Contextual Info: ESDCAN24-2BLY Automotive dual-line Transil , transient voltage suppressor TVS for CAN bus Datasheet - production data Complies with the following standards • ISO 10605 - C = 150 pF, R = 330 Ω : – 30 kV (air discharge) – 30 kV (contact discharge)

Contextual Info: ESDCAN24-2BLY Automotive dual-line Transil , transient voltage suppressor TVS for CAN bus Datasheet - production data Complies with the following standards • ISO 10605 - C = 150 pF, R = 330  – 30 kV (air discharge) – 30 kV (contact discharge)

Contextual Info: VND5E004A-E VND5E004ASP30-E Double 4mΩ high-side driver with analog current sense for automotive applications Datasheet − production data Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max on-state resistance per ch.

M48T129V

Abstract: M48T129Y
Contextual Info: M48T129Y M48T129V 5.0 or 3.3 V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded century, year, month, day, date, hours, minutes, and seconds

Contextual Info: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

50T60

Abstract: l9911 alternator voltage regulator Circuit Diagram alternator dc 24v dfm circuit CAR ALTERNATOR REGULATOR
Contextual Info: L9911 CAR ALTERNATOR MULTIFUNCTION SMART VOLTAGE REGULATOR PRELIMINARY DATA 1 • ■ ■ ■ ■ ■ ■ ■ ■ 2 Features FULLY MONOLITHIC DESIGN HIGH SIDE FIELD DRIVER THERMAL PROTECTION FIELD SHORT CIRCUIT PROTECTION PROTECTED DIAGNOSTIC LAMP DRIVER PROTECTED HIGH SIDE RELAY DRIVER