TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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bussmann semiconductor fuse catalogue
Abstract: bs1362 BUSSMANN SFT Series HKP-HH fuses T2A 250V C520 A/D 1.5A, 125V, 32mm glass fuse IEC-127-4 HTC220M FUSE 3A 125V SMT
Text: Bussmann Table of Contents Fuse Holder Selection Chart 2 Surface Mount Fuses 3 Axial and Radial Leaded Fuses 8 5 x 15mm Fuses 12 5 x 20mm Fuses 18 6.3 x 32mm Fuses 36 Automotive Fuses 46 Miscellaneous Fuses 47 Fuse Clips for 5mm dia. Fuses 51 Fuse Clips for 6.3mm dia. Fuses
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S504-V
S505-V
TDC10
TDC11
TDC17
TDC180
bussmann semiconductor fuse catalogue
bs1362
BUSSMANN SFT Series
HKP-HH
fuses T2A 250V
C520 A/D
1.5A, 125V, 32mm glass fuse
IEC-127-4
HTC220M
FUSE 3A 125V SMT
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IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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AT52BR3244
Abstract: AT52BR3244T AT52BR3248 AT52BR3248T SA70
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • •
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32-Mbit
66-ball
2471B
08/01/xM
AT52BR3244
AT52BR3244T
AT52BR3248
AT52BR3248T
SA70
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VOGT p8
Abstract: tic 2160 triac kaschke fi 270 uaa145 EQUIVALENT UAA145 "direct replacement" TDA1086T telefunken transistor Kaschke Components CQY40 UAA146
Text: Allgemeines General Seite Page • H I Schaltungen fur Rundfunkempfanger Circuits for radio receivers Seite Page Schaltungen fur die Signalverarbeitung in Fernsehempfangern Circuits for the signal processing in television receivers Seite ■ Page ■ Schaltungen fur Bedienungssysteme in Rundfunk- und
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR I DATA SHEET ¡ DS05-50112-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 16) FLASH MEMORY & o n i i /v, n nil 2 M (x 16) STATIC RAM o t a t i p a MB84VA2108-10/MB84VA2109 -10 • FEATURES • Power supply voltage of 2.7 to 3.6 V
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DS05-50112-1E
MB84VA2108-10/MB84VA2109
MB84VA2108:
MB84VA2109:
84VA2108-1
VA2109-1o
MCM-M002-3-2
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equivalent sd 4841
Abstract: FFA70 K C2800 Y GR-253-CORE* K1 K C2800 Y pin configuration transistor c2800 GR253-CORE PM5347 APS software TBA 2800
Text: PM5347 S/UNI-PLUS PRELIMINARY REFERENCE DESIGN PMC- 971116 ISSUE 2 APS SOFTWARE REFERENCE DESIGN PM5347 AUTOMATIC PROTECTION SWITCHING APS SOFTWARE REFERENCE DESIGN PRELIMINARY ISSUE 2:FEBUARY 1997 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000
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PM5347
PM5347
PM-971116
equivalent sd 4841
FFA70
K C2800 Y
GR-253-CORE* K1
K C2800 Y pin configuration
transistor c2800
GR253-CORE
APS software
TBA 2800
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Untitled
Abstract: No abstract text available
Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION
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IS71VPCF32XS04
73-ball
CF32ES04-8570BI
IS71VPCF32FS04-8570BI
IS71VPCF32AS04-8585BI
IS71VPCF32BS04-8585BI
IS71VPCF32CS04-8585BI
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A0-A21
Abstract: No abstract text available
Text: ISSI IS71VPCF64GS08 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 64 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.1V • High performance: FLASH FEATURES • Power Dissipation:
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IS71VPCF64GS08
IS71VPCF64GS08-7070DI
65-ball
A0-A21
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IRT 1250
Abstract: irt 1260 Zener diode ZTK 2066 TVPO KEYBOARD CONTROLLER 8049 TVPO-2066 TVPO2066 8049 Keyboard Controller SAA 1260 CI 3060 elsys
Text: TVPO 2066 TV Controller with On-Screen Display for TV Receivers Edition August 24, 1992 6251-327-3E ITT Semiconductors TVPO 2066 Contents Page Section Title 3 1. Introduction 3 3 4 4 4 5 5 5 5 5 5 5 6 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.9.1.
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6251-327-3E
1N4148
BF240
IRT 1250
irt 1260
Zener diode ZTK
2066 TVPO
KEYBOARD CONTROLLER 8049
TVPO-2066
TVPO2066
8049 Keyboard Controller
SAA 1260
CI 3060 elsys
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SAMSUNG NOR Flash
Abstract: No abstract text available
Text: NOR FLASH MEMORY K8S6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8S6415ET
00003FH
00007FH
0000BFH
000000H
44-Ball
SAMSUNG NOR Flash
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samsung nor flash
Abstract: BA102 BA127 Diode BA134 samsung nor K8A6415EBB
Text: NOR FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8A6415ET
couldre17.
54MHz
A0-A21
00000FH
00001FH
00002FH
000000H
samsung nor flash
BA102
BA127 Diode
BA134
samsung nor
K8A6415EBB
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BA260
Abstract: BA139 BA138 BA138 diode BA205 BA169 BA251 ba209 BA114 ba148
Text: K8A2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8A2815ET
128Mb
54MHz
A0-A22
00000FH
00001FH
00002FH
000000H
BA260
BA139
BA138
BA138 diode
BA205
BA169
BA251
ba209
BA114
ba148
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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BA204
Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
Text: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)
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KBF0x0800M
8Mx16)
4Mx16)
115-Ball
80x13
BA204
ba148
BA238
SAMSUNG MCP
BA167
MCP MEMORY
BA262
BA259
UtRAM Density
BA153
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BA258
Abstract: ba146 BA148 ba198 BA204
Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8S2815ET
128Mb
00003FH
00007FH
0000BFH
000000H
44-Ball
BA258
ba146
BA148
ba198
BA204
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BA512
Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh
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K8S5615ET
22F8h
22FEh
54MHz
66MHz
270sec
240sec
256Byte
00003FH
00007FH
BA512
ba469
BA516
BA508
BA323
BA340
BA476
BA507
BA312
BA379
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BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA379
BA377
BA339
BA438
BA429
BA416
ba-302
BA512
BA308
ba324
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06SEC
Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F56
256Mb
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
00C000h-00FFFFh
06SEC
BA213
16N10
BA167
BA184
15ET
BA244
BA242
K8F5615ETM
samsung nor flash
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Untitled
Abstract: No abstract text available
Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F56
256Mb
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
00C000h-00FFFFh
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66c4
Abstract: No abstract text available
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85, 90, 110 ns • Sector Erase Architecture • • • • • • •
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32-Mbit
66-ball
2471D
66c4
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AT52BR3224
Abstract: AT52BR3244 AT52BR3244T AT52BR3248 AT52BR3248T
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85, 90, 110 ns • Sector Erase Architecture • • • • • • •
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32-Mbit
66-ball
2471E
AT52BR3224
AT52BR3244
AT52BR3244T
AT52BR3248
AT52BR3248T
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Untitled
Abstract: No abstract text available
Text: S71GL064A based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE Distinctive Characteristics MCP Features
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S71GL064A
16-bit)
1M/512K
TLC056)
S29GL064
S71GL064A80/S71GL064A08
S71GL064AA0/S71GL064A0A
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Untitled
Abstract: No abstract text available
Text: IC71V16F64IS08 Document Title Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (512 K x 16-Bit) Pseudo SRAM Revision History Revision No. 0A History
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IC71V16F64IS08
16-Bit)
MCP005-0A
73-ball
IC71V16F64IS08-85B73
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