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    BA260 Search Results

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    BA260 Price and Stock

    Comchip Technology Corporation Ltd CDBA260-HF

    DIODE SCHOTTKY 60V 2A DO214AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CDBA260-HF Digi-Reel 183,551 1
    • 1 $0.35
    • 10 $0.235
    • 100 $0.35
    • 1000 $0.11072
    • 10000 $0.1005
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    CDBA260-HF Cut Tape 183,551 1
    • 1 $0.35
    • 10 $0.235
    • 100 $0.35
    • 1000 $0.11072
    • 10000 $0.1005
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    CDBA260-HF Reel 175,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.07188
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    Mouser Electronics CDBA260-HF 27,865
    • 1 $0.47
    • 10 $0.333
    • 100 $0.168
    • 1000 $0.116
    • 10000 $0.09
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    Bristol Electronics CDBA260-HF 7,924
    • 1 -
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    • 10000 -
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    Karl Kruse GmbH & Co KG CDBA260-HF 85,000
    • 1 -
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    NAC CDBA260-HF 95,000 1
    • 1 $0.19
    • 10 $0.19
    • 100 $0.19
    • 1000 $0.19
    • 10000 $0.083
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    Chip 1 Exchange CDBA260-HF 85,000
    • 1 -
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    Comchip Technology Corporation Ltd ACDBA260-HF

    DIODE SCHOTTKY 60V 2A DO214AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ACDBA260-HF Cut Tape 2,670 1
    • 1 $0.36
    • 10 $0.243
    • 100 $0.36
    • 1000 $0.11458
    • 10000 $0.10407
    		Buy Now
    ACDBA260-HF Digi-Reel 2,670 1
    • 1 $0.36
    • 10 $0.243
    • 100 $0.36
    • 1000 $0.11458
    • 10000 $0.10407
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    Mouser Electronics ACDBA260-HF 2,004
    • 1 $0.35
    • 10 $0.273
    • 100 $0.164
    • 1000 $0.095
    • 10000 $0.081
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    NAC ACDBA260-HF 5,000
    • 1 $0.2
    • 10 $0.2
    • 100 $0.2
    • 1000 $0.2
    • 10000 $0.086
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    Schneider Electric DL1BA260

    1 UNIT= 1 BULB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DL1BA260 Box 10 1
    • 1 $17.52
    • 10 $16.268
    • 100 $12.5139
    • 1000 $11.42936
    • 10000 $11.42936
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    Mouser Electronics DL1BA260
    • 1 $16.64
    • 10 $15.42
    • 100 $12.51
    • 1000 $11.42
    • 10000 $11.42
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    Newark DL1BA260 Bulk 10
    • 1 -
    • 10 $17.06
    • 100 $15.77
    • 1000 $15.77
    • 10000 $15.77
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    RS DL1BA260 Bulk 9 1 Weeks 1
    • 1 $17.31
    • 10 $17.31
    • 100 $17.31
    • 1000 $17.31
    • 10000 $17.31
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    TE Connectivity A3BBA-2606G

    IDC CABLE-ASS26A/ AE26G / ASS26A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A3BBA-2606G Bulk 1
    • 1 $8.49
    • 10 $6.917
    • 100 $8.49
    • 1000 $3.53136
    • 10000 $3.22798
    		Buy Now

    TE Connectivity A3BBA-2606M

    IDC CABLE- ASS26A/ AE26M / ASS26
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A3BBA-2606M Bulk 1
    • 1 $9.19
    • 10 $7.484
    • 100 $9.19
    • 1000 $3.82076
    • 10000 $3.49251
    		Buy Now
    Find more BA260 price and stock on Findchips.com

    BA260 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    LEXAN 121r - 21051

    Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
    Text: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F


    Original     		PDF BA31-00024A BA39-00474A BA39-00493A S/80GB WLAN-802 L50000 L35mm L228mm LEXAN 121r - 21051 lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A

    RAS 0510 SUN HOLD

    Abstract: sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D GENEVA CPU : Chip Set : Remarks :


    Original     		PDF BA41-XXXXX SheP18050 TP18051 TP18052 TP18164 TP18170 TP18172 TP18178 TP18183 TP18187 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung

    ST T4 D560

    Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom


    Original     		PDF YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4

    Marvell 88E8055

    Abstract: keyboard and touchpad schematic CIS10J270NC p23 343 B530 Socket AM2 intel g41 ich9 88E8040 SAMSUNG ELECTRONICS BA41
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D XI’AN-MV CPU :INTEL MEROM/PENRYN


    Original     		PDF BA41-00926A/00927A Alc262 Sheet45 Sheet46 Isl6256a Sheet47 Sheet48 Sheet49 Isl6266a Marvell 88E8055 keyboard and touchpad schematic CIS10J270NC p23 343 B530 Socket AM2 intel g41 ich9 88E8040 SAMSUNG ELECTRONICS BA41

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


    Original     		PDF TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT

    BA142

    Abstract: No abstract text available
    Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

    BA339

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


    Original     		PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    2SD618

    Abstract: MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents SEDONA_plus Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF Yonah667 BA41-00697A CALISTP11574 TP11575 TP11578 TP11579 TP11516 TP11517 TP11520 2SD618 MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2

    30b1 diode

    Abstract: ntc 10d-7 DIODE G7.9 27B2 diode 45x1 diode M30 c300 811324 q515 11F4 smd diode f4 4d
    Text: This Document can not be used without Samsung’s authorization. 5 Schematic Diagrams and PCB Silkscreen 5-1 MAIN BOARD 5-1-1 Schematic Diagrams M30 5-1 5 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization.


    Original     		PDF 100nF, 1/16W 30b1 diode ntc 10d-7 DIODE G7.9 27B2 diode 45x1 diode M30 c300 811324 q515 11F4 smd diode f4 4d

    32 inch TV samsung lcd Schematic

    Abstract: BA41-00866A 8C445 PCIe_MiniCard_Slot Socket AM2 ich9 baa0 mx25l8005m2c-15g oslo2 FPC 60p
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D OSLO2 C B Model Name : Oslo2_DDR3 PBA Name : MAIN


    Original     		PDF BA41-00866A BA41-00867A Sheet62 Sheet63 Sheet64 Sheet65 Sheet66 Isl6256a Sheet67 Sheet68 32 inch TV samsung lcd Schematic 8C445 PCIe_MiniCard_Slot Socket AM2 ich9 baa0 mx25l8005m2c-15g oslo2 FPC 60p

    C1093

    Abstract: SLD9630TT C1079 2007-000162 BA68-40012N C1061 npn 470nF 50V X7R ics954 C347 C558 npn
    Text: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 10.자재 리스트 10-1. Main Board X25 / X20(EXT Item No Design LOC Parts name Spec 0201-001002


    Original     		PDF BA68-10191W BA68-40005L BA68-40012N BA96-02726A BA96-02728A ALVISO500 49LW080 4x10mm 49LF008A C1093 SLD9630TT C1079 2007-000162 C1061 npn 470nF 50V X7R ics954 C347 C558 npn

    MMZ1608S121AT

    Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV


    Original     		PDF 945GMS BA41-00680A BA41-00683A Pag614 TP18615 TP18616 TP18617 TP18618 TP18619 TP18620 MMZ1608S121AT nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns---

    BA379

    Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
    Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S1215ETC K8S1215EBC K8S1215EZC 512Mb 64FBGA, 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh 0110000h-011FFFFh BA379 BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258

    BA339

    Abstract: ba406 K8F1315ETM
    Text: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F12 512Mb inh-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh BA339 ba406 K8F1315ETM