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    08051J5R6BBT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    08051J5R6BBTTR AVX Thin-Film Chip Capacitor Original PDF

    08051J5R6BBT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION


    Original     		MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage


    Original     		MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1 PDF

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    03B3

    Abstract: 1206 cms diode 100B100JCA500X MW4IC915GMBR1 MW4IC915MBR1 TAJE226M035R bourns 3224w
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM


    Original     		MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 03B3 1206 cms diode 100B100JCA500X MW4IC915GMBR1 TAJE226M035R bourns 3224w PDF

    1206 cms diode

    Abstract: 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915MBR1
    Text: Freescale Semiconductor Technical Data MW4IC915 Rev. 3, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		MW4IC915 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 1206 cms diode 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage


    Original     		MW4IC915 MW4IC915MB/GMB MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 PDF

    GM 950 motorola

    Abstract: MW4IC915MBR1 Marking Z7 Gate Driver 1206 cms 1206 cms diode marking Z4 MW4IC915MB A113 AN1955 AN1987
    Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION


    Original     		MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 GM 950 motorola Marking Z7 Gate Driver 1206 cms 1206 cms diode marking Z4 MW4IC915MB A113 AN1955 AN1987 PDF

    A113

    Abstract: AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915NBR1 GM 950 motorola 686 CAPACITOR
    Text: Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage


    Original     		MW4IC915 MW4IC915MB/GMB MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 A113 AN1955 AN1987 MW4IC915 MW4IC915GMBR1 GM 950 motorola 686 CAPACITOR PDF

    08051J5R6BBT

    Abstract: j452 cms 920
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage


    Original     		MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 08051J5R6BBT j452 cms 920 PDF

    mw4ic915nb

    Abstract: AN1977 AN1987 MW4IC915GNBR1 MW4IC915NBR1 A113 AN1955 ic marking z7 GM 950 motorola
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1 mw4ic915nb AN1977 AN1987 MW4IC915GNBR1 A113 AN1955 ic marking z7 GM 950 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 RDMRF5S21130UMTS PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs W–CDMA 2.11–2.17 GHz


    Original     		MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 RDMRF5S21130UMTS PDF

    08055C103KAT

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High


    Original     		MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 08055C103KAT PDF

    TO272

    Abstract: 03B3 1206 cms diode 100B100JCA500X A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 TAJE226M035R
    Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High


    Original     		MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 TO272 03B3 1206 cms diode 100B100JCA500X A113 MW4IC915GMBR1 MW4IC915MB TAJE226M035R PDF

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3 PDF

    1206 cms diode

    Abstract: 08055C103KAT A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 RF35 1206 cms
    Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High


    Original     		MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 1206 cms diode 08055C103KAT A113 MW4IC915GMBR1 MW4IC915MB RF35 1206 cms PDF