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Catalog Datasheet	MFG & Type	PDF	Document Tags
infineon power fet Abstract: 45ACP PTF082002E Text: Developmental PTF 082002E High Power RF LDMOS FET 200 W, 860–900 MHz Description Features The PTF 082002E is a 200 W, internally matched GOLDMOS FET intended for CDMA applications in the 860-900 MHz bands. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	082002E 082002E IS-95 infineon power fet 45ACP PTF082002E

Catalog Datasheet

MFG & Type

PDF

Document Tags

infineon power fet

Abstract: 45ACP PTF082002E
Text: Developmental PTF 082002E High Power RF LDMOS FET 200 W, 860–900 MHz Description Features The PTF 082002E is a 200 W, internally matched GOLDMOS FET intended for CDMA applications in the 860-900 MHz bands. Full gold metallization ensures excellent device lifetime and reliability.

Original

PDF

082002E 082002E IS-95 infineon power fet 45ACP PTF082002E