5SDF08F4505
Abstract: PULSE16
Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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Original
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08F4505
08F4505
08F4005
1768/138a,
DM/201/06
Jul-10
5SDF08F4505
PULSE16
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PDF
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5SDF 08F4505
Abstract: abb S 08f45
Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807
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Original
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08F4505
1768/138a,
DM/201/06a
Aug-11
08F450A
Aug-11
5SDF 08F4505
abb S
08f45
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PDF
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5SGS 16H4500
Abstract: CS 23-06 thyristor
Text: 5SGS 16H4500 5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600
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Original
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16H4500
1768/138a,
TG/171/05a
Sep-11
5SGS 16H4500
CS 23-06 thyristor
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PDF
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ABB Typ RGC
Abstract: 5SGS12F4500
Text: 5SGS 12F4500 5SGS 12F4500 Old part no. TG 918-1200-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 200 I TAVm = 442 I TSM = 7 600
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Original
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12F4500
12F4500
12F4000
1768/138a,
TG/142/04
Jul-10
Jul-10
ABB Typ RGC
5SGS12F4500
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PDF
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CS 23-06 thyristor
Abstract: No abstract text available
Text: 5SGS 16H4500 5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600 I TSM = 12 000
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Original
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16H4500
16H4500
16H4000
1768/138a,
TG/171/05
Jul-10
Jul-10
CS 23-06 thyristor
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PDF
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