SC-89
Abstract: Si1023X sot-563 MOSFET D1
Text: Si1023X New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D
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Si1023X
08-Apr-05
SC-89
sot-563 MOSFET D1
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FTS256K
Abstract: HCS12 MASER FTS256K Block User Guide
Text: DOCUMENT NUMBER S12FTS256KV2/D FTS256K Block Guide V02.03 Original Release Date: 08 FEB 2001 Revised: 11 MAR 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein;
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S12FTS256KV2/D
FTS256K
FTS256K
HCS12
MASER
FTS256K Block User Guide
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BT 1840 PA
Abstract: No abstract text available
Text: T2801 DECT Single-Chip Transceiver Description The T2801 is an RF IC for low-power DECT applications. The HP-VFQFP-N48-packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,
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T2801
T2801
HP-VFQFP-N48-packaged
D-74025
08-Feb-01
BT 1840 PA
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FTS256K
Abstract: HCS12 ff092 FTS256K Block User Guide
Text: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12FTS256KV3/D Freescale Semiconductor, Inc. FTS256K Block User Guide V03.00 Original Release Date: 08 FEB 2001 Revised: 16 OCT 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or
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S12FTS256KV3/D
FTS256K
FTS256K
HCS12
ff092
FTS256K Block User Guide
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Si1413EDH
Abstract: No abstract text available
Text: SPICE Device Model Si1413EDH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1413EDH
08-Feb-01
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7150-1
Abstract: Si1410EDH 71501
Text: SPICE Device Model Si1410EDH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1410EDH
08-Feb-01
7150-1
71501
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SC-89
Abstract: Si1024X
Text: Si1024X New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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Si1024X
S-03104--Rev.
08-Feb-01
SC-89
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SC-89
Abstract: Si1016X
Text: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400
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Si1016X
08-Apr-05
SC-89
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FTS256K Block User Guide
Abstract: FTS256K ff092
Text: DOCUMENT NUMBER S12FTS256KV3/D FTS256K Block User Guide V03.01 Original Release Date: 08 FEB 2001 Revised: 8 APR 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or
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S12FTS256KV3/D
FTS256K
FTS256K
FTS256K Block User Guide
ff092
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PDF
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Automatic Voltage stabilizer 5 kw
Abstract: sfe 5.74 circuit diagram of sound wireless automatic Audio switch circuit diagram SFE 5.5 MC automatic stabilizer circuit diagram about SFE-5.5 U2860B-B U2860B-BFP audio squelch circuit design
Text: U2860B-B Dual-Channel FM Sound Demodulator for TV Systems Description The U2860B-B is a dual-channel FM sound demodulator realized with Atmel Wireless & Microcontrollers’ advanced bipolar process. All TV FM standards, from 4.5 up to 6.5 MHz standard M, B/G, I, D/K can be processed
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U2860B-B
U2860B-B
D-74025
08-Feb-01
Automatic Voltage stabilizer 5 kw
sfe 5.74
circuit diagram of sound wireless
automatic Audio switch circuit diagram
SFE 5.5 MC
automatic stabilizer circuit diagram about
SFE-5.5
U2860B-BFP
audio squelch circuit design
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SC-89
Abstract: Si1023X
Text: Si1023X New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D
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Si1023X
S-03104--Rev.
08-Feb-01
SC-89
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PDF
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SC-89
Abstract: Si1016X
Text: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400
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Si1016X
S-03104--Rev.
08-Feb-01
SC-89
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Untitled
Abstract: No abstract text available
Text: S Ì1024X Vishay Siliconix VISHAY New Product Dual N-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY rDS(on) (&) lD (mA) 0.70 @ V GS = 4.5 V 600 0.85 @ V GS = 2.5 500 V d s (V) 20 M OSFETs V 1.8-V Rated (£) 350 1.25 @ VqS = 1 8 V ESD Protected 2000 V
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1024X
S-03104--
08-Feb-01
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Untitled
Abstract: No abstract text available
Text: 8 T H IS D R A W IN G C C O P Y R I G H T RESERVED. IS U N P U B L IS H E D . I9 YR AMP BY PRO D UCTS MAY BE 6 7 DRAWING MADE IN THIRD ANGLE PROJECTION R ELEA S ED AMP FO R P U B L IC A T IO N IN C O R P O R A T E D . COVERED BY U .S . PU B D ATE H A R R IS B U R G . P A .
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OG3C-0030-01
08FEB01
COPPER/80
IQ/36*
I024-4
I024-3
I7I05
-6g53
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Untitled
Abstract: No abstract text available
Text: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 BY TYCO E L E C T R O N I C S R E L E A S E D FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. 1A PHOSPHOR BRONZE A GLASS F IL L E D POLYESTER !A 0. 7 6 j m M I N G O L D O V E R I . 2 7 j j m M I N N I C K E L ON C O N T A C T A R E A
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I0JUN2002
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S11016X
Abstract: 2sc 1014
Text: _S11016X Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY Vd N-Channel s r DS(on) (ß ) Id (m A ) M O SFETs 0 .7 0 V G S= 4.5 V 600 1.8-V Rated 0.85 @ V g s = 2.5 V
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S11016X
S-03104--
08-Feb-01
1016X
S11016X
2sc 1014
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS LOC AD 47 RE S E RV E D. R E V 1S I O N S D I ST p LTR A. PHOSPHOR BRONZE A lA GL A S S F I L L E D P O L Y E S T E R
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08FEB01
22MAY01
07JUN2002
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 BY TYCO E L E C T R O N I C S R E L E A S E D FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. 22.50 TYP -s H T - 2.50 TYP f\ m m m \ m 1A PHOSPHOR BRONZE A GLASS F I L L E D POLYESTER
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08FEB01co
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Untitled
Abstract: No abstract text available
Text: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 BY TYCO E L E C T R O N I C S R E L E A S E D FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. /h ft MIM I PHOSPHOR BRONZE A GLASS 1 0 L SIG NA L CONTACT TYP REP 10. A. p 47
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26APR99
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