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    SI1410EDH Price and Stock

    Vishay Siliconix SI1410EDH-T1-E3

    MOSFET N-CH 20V 2.9A SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1410EDH-T1-E3 Digi-Reel 1
    • 1 $0.91
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    SI1410EDH-T1-E3 Reel 3,000
    • 1 -
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    • 10000 $0.21916
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    SI1410EDH-T1-E3 Cut Tape 1
    • 1 $0.91
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    Vishay Intertechnologies SI1410EDH-T1

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    Bristol Electronics SI1410EDH-T1 2,782
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    Quest Components SI1410EDH-T1 2,225
    • 1 $1.68
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    • 1000 $0.4368
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    Vishay Intertechnologies SI1410EDH-T1-E3

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    Quest Components SI1410EDH-T1-E3 2,032
    • 1 $0.672
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    SI1410EDH-T1-E3 1,953
    • 1 $0.672
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    Vishay Intertechnologies SI1416EDH-T1-GE3

    MOSFETs 30V Vds 12V Vgs SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SI1416EDH-T1-GE3 Reel 165,000 3,000
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    Vishay Intertechnologies SI1410EDHT1GE3

    N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI1410EDHT1GE3 3,000
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    Find more SI1410EDH price and stock on Findchips.com

    SI1410EDH Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si1410EDH Vishay Intertechnology N-Channel 20-V (D-S) MOSFET with Copper Leadframe Original PDF
    SI1410EDH Vishay Siliconix MOSFETs Original PDF
    Si1410EDH SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI1410EDH-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.9A SC70-6 Original PDF

    SI1410EDH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si1410EDH

    Abstract: MARKING CODE AA
    Text: Si1410EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.070 at VGS = 4.5 V 3.7 0.080 at VGS = 2.5 V 3.4 0.100 at VGS = 1.8 V 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si1410EDH SC-70 2002/95/EC OT-363 SC-70 Si1410EDH-T1-E3 Si1410EDH-lectual 18-Jul-08 MARKING CODE AA PDF

    Si1410EDH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1410EDH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1410EDH 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1410EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.070 at VGS = 4.5 V 3.7 0.080 at VGS = 2.5 V 3.4 0.100 at VGS = 1.8 V 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si1410EDH SC-70 2002/95/EC OT-363 SC-70 Si1410EDH-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    7150-1

    Abstract: Si1410EDH 71501
    Text: SPICE Device Model Si1410EDH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1410EDH 08-Feb-01 7150-1 71501 PDF

    Si1410EDH

    Abstract: 7150-1
    Text: SPICE Device Model Si1410EDH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1410EDH S-52291Rev. 31-Oct-05 7150-1 PDF

    marking AA 6-pin

    Abstract: MARKING AA 6pin S10-0935-Rev
    Text: Si1410EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.070 at VGS = 4.5 V 3.7 0.080 at VGS = 2.5 V 3.4 0.100 at VGS = 1.8 V 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si1410EDH SC-70 2002/95/EC OT-363 SC-70 Si1410EDH-T1-E3 Si1410EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking AA 6-pin MARKING AA 6pin S10-0935-Rev PDF

    7150-1

    Abstract: Si1410EDH and/SMD 7150-1
    Text: SPICE Device Model Si1410EDH N-Channel 20-V D-S MOSFET with Copper Leadframe Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		Si1410EDH 7150-1 and/SMD 7150-1 PDF

    Si1410EDH

    Abstract: No abstract text available
    Text: Si1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.070 @ VGS = 4.5 V 3.7 APPLICATIONS 20


    Original     		Si1410EDH SC-70 OT-363 SC-70 S-03185--Rev. 05-Mar-01 PDF

    Si1410EDH

    Abstract: No abstract text available
    Text: Si1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.070 @ VGS = 4.5 V 3.7 APPLICATIONS 20


    Original     		Si1410EDH SC-70 OT-363 SC-70 18-Jul-08 PDF

    4437

    Abstract: AN609 Si1410EDH
    Text: Si1410EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si1410EDH AN609 02-Mar-06 4437 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1410EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.070 at VGS = 4.5 V 3.7 0.080 at VGS = 2.5 V 3.4 0.100 at VGS = 1.8 V 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si1410EDH SC-70 2002/95/EC OT-363 SC-70 Si1410EDH-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    MARKING AA 6pin

    Abstract: marking AA 6-pin
    Text: Si1410EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.070 at VGS = 4.5 V 3.7 0.080 at VGS = 2.5 V 3.4 0.100 at VGS = 1.8 V 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si1410EDH SC-70 2002/95/EC OT-363 SC-70 Si1410EDH-T1-E3 Si1410EDH-T1-GE3 11-Mar-11 MARKING AA 6pin marking AA 6-pin PDF

    Si1410EDH

    Abstract: 125C42 s0318
    Text: Si1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.070 @ VGS = 4.5 V 3.7 APPLICATIONS 20


    Original     		Si1410EDH SC-70 OT-363 SC-70 08-Apr-05 125C42 s0318 PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 PDF