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    5STP08G6500

    Abstract: ABB thyristor 5
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 760 A 1200 A 11600 A 1.22 V 0.970 mΩ Ω Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA1006-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    PDF 08G6500 5SYA1006-03 08G6200 08G5800 CH-5600 5STP08G6500 ABB thyristor 5

    5STP08G6500

    Abstract: No abstract text available
    Text: VDSM = 6500 V ITAVM = 760 A ITRMS = 1200 A ITSM = 11600 A VT0 = 1.22 V rT = 0.970 mΩ Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA1006-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    PDF 5SYA1006-03 08G6500 08G6500 08G6200 08G5800 67xVDRM 110ing CH-5600 5STP08G6500

    63650-1

    Abstract: No abstract text available
    Text: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 5600 V 6500 V 720 A 1140 A 11.8x103 A 1.24 V 1.015 mΩ Ω Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA1006-03 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses


    Original
    PDF 08G6500 5SYA1006-03 08G6500 08G6200 08G5800 CH-5600 63650-1

    08G6500

    Abstract: 5STP 08G6500
    Text: Key Parameters VDSM = 6500 ITAVM = 815 ITRMS = 1270 ITSM = 11600 VT0 = 1.22 rT = 0.970 V A A A V mΩ Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA 1006-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original
    PDF 08G6500 08G6500 08G6200 08G5800 67xVDRM CH-5600 5STP 08G6500