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    08NG Search Results

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    UC3708NG4
    		Texas Instruments Non-Inverting High Speed Power Drivers 8-PDIP 0 to 70 Visit Texas Instruments Buy
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    08NG Price and Stock

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    Rochester Electronics LLC 2SA608NG-NPA-AT

    TRANS PNP 50V 0.15A TO92
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    DigiKey () 2SA608NG-NPA-AT Bulk 144,000 5,453
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    Rochester Electronics LLC MC74ACT08NG

    IC GATE AND 4CH 2-INP 14DIP
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    DigiKey MC74ACT08NG Tube 41,486 950
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    Rochester Electronics LLC MC74AC08NG

    IC GATE AND 4CH 2-INP 14DIP
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    DigiKey MC74AC08NG Tube 3,950 950
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    Microchip Technology Inc MSCSM120HRM08NG

    MOSFET 4N-CH 1200V/700V 317A
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    DigiKey MSCSM120HRM08NG Tube 8 1
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    Avnet Americas MSCSM120HRM08NG Bulk 20 Weeks 2
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    Mouser Electronics MSCSM120HRM08NG
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    Newark MSCSM120HRM08NG Bulk 2
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    Microchip Technology Inc MSCSM120HRM08NG 20 Weeks
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    NAC MSCSM120HRM08NG 1
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    Richardson RFPD MSCSM120HRM08NG 2
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    Master Electronics MSCSM120HRM08NG
    • 1 $538.6
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    BOYD Laconia 5005-08NG

    THM,5005-08NG
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    Onlinecomponents.com 5005-08NG
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    08NG Datasheets Context Search

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    48 08NG

    Abstract: 4808ng 369D NTD4808N 08NG
    Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		NTD4808N NTD4808N/D 48 08NG 4808ng 369D NTD4808N 08NG PDF

    08NG

    Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTD4808N NTD4808N/D 08NG PDF

    4808ng

    Abstract: 08NG
    Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTD4808N NTD4808N/D 4808ng 08NG PDF

    08NG

    Abstract: IPAK d marking code dpak transistor MARKING QG 6 PIN part marking id v marking code dpak 369D NTD3808N-1G NTD3808N-35G NTD3808NT4G
    Contextual Info: NTD3808N Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		NTD3808N NTD3808N/D 08NG IPAK d marking code dpak transistor MARKING QG 6 PIN part marking id v marking code dpak 369D NTD3808N-1G NTD3808N-35G NTD3808NT4G PDF

    48 08NG

    Abstract: 369D NTD4808N NTD4808NT4G 08ng
    Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808NT4G 08ng PDF

    Contextual Info: NTD3808N Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		NTD3808N NTD3808N/D PDF

    Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		NTD4808N, NVD4808N NTD4808N/D PDF

    48 08NG

    Abstract: 369D 4808ng 08NG NTD4808N
    Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		NTD4808N NTD4808N/D 48 08NG 369D 4808ng 08NG NTD4808N PDF

    48 08NG

    Abstract: 369D NTD4808N NTD4808N35G TR 069
    Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808N35G TR 069 PDF

    Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		NTD4808N, NVD4808N NTD4808N/D PDF

    NVD4808N

    Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		NTD4808N, NVD4808N AEC-Q101 NTD4808N/D PDF