Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC
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MT45W256KW16PEGA
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 8Mb: 512K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC
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MT45W512KW16PEGA
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tbw 70.18
Abstract: MT45V256KW16PEGA
Text: 4Mb: 3.0V Core Async/Page PSRAM Memory 256K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ
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MT45V256KW16PEGA
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MT45V256KW16PEGA
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC
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MT45W256KW16PEGA
16-word
48-Ball
09005aef8329b746/Source:
09005aef82f264aa
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Untitled
Abstract: No abstract text available
Text: 4Mb: 256K x16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ
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MT45W256KW16PEGA
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09005aef8329b746
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Diode smd f6
Abstract: smd diode marking a6 smd transistor marking A5 48 ball VFBGA marking E5 micron sram smd diode MARKING F6 SMD MARKING CODE h5 transistor smd marking CR
Text: 8Mb: 512K x16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ
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MT45W512KW16PEGA
16-word
09005aef82f264f6
09005aef82f264aa
Diode smd f6
smd diode marking a6
smd transistor marking A5
48 ball VFBGA
marking E5
micron sram
smd diode MARKING F6
SMD MARKING CODE h5
transistor smd marking CR
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MT45V512KW16PEGA-55WT
Abstract: No abstract text available
Text: 8Mb: 3.0V Core Async/Page PSRAM Memory 512K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ
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MT45V512KW16PEGA
16-word
48-Ball
09005aef82f264f6/Source:
09005aef82f264aa
MT45V512KW16PEGA-55WT
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