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    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 8Mb: 512K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC


    Original     		PDF MT45W512KW16PEGA 16-word 48-Ball 09005aef82f264f6/Source: 09005aef82f264aa

    Diode smd f6

    Abstract: smd diode marking a6 smd transistor marking A5 48 ball VFBGA marking E5 micron sram smd diode MARKING F6 SMD MARKING CODE h5 transistor smd marking CR
    Text: 8Mb: 512K x16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ


    Original     		PDF MT45W512KW16PEGA 16-word 09005aef82f264f6 09005aef82f264aa Diode smd f6 smd diode marking a6 smd transistor marking A5 48 ball VFBGA marking E5 micron sram smd diode MARKING F6 SMD MARKING CODE h5 transistor smd marking CR

    MT45V512KW16PEGA-55WT

    Abstract: No abstract text available
    Text: 8Mb: 3.0V Core Async/Page PSRAM Memory 512K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ


    Original     		PDF MT45V512KW16PEGA 16-word 48-Ball 09005aef82f264f6/Source: 09005aef82f264aa MT45V512KW16PEGA-55WT