tbw 70.18
Abstract: MT45V256KW16PEGA
Text: 4Mb: 3.0V Core Async/Page PSRAM Memory 256K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ
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MT45V256KW16PEGA
16-word
48-Ball
09005aef832450a3/Source:
09005aef82f264aa
tbw 70.18
MT45V256KW16PEGA
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4Mb: 3.0V Core Async/Page PSRAM Memory 256 x16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC
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Original
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PDF
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MT45V256KW16PEGA
16-word
48-Ball
D3900
09005aef832450a3
09005aef82fe568d
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4Mb: 3.0V Core Async/Page PSRAM Memory 256 x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC
|
Original
|
PDF
|
MT45V256KW16PEGA
16-word
48-Ball
09005aef832450a3/Source:
09005aef82fe568d
|