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SMD 5 PIN CODE G7 Abstract: smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9 Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock	Original	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752 SMD 5 PIN CODE G7 smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9	PDF
Untitled Abstract: No abstract text available Text: Preliminary‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive	Original	128Mb: MT48H8M16LF MT48H4M32LF 09005aef832ff1ea 09005aef832ff1ac	PDF
Untitled Abstract: No abstract text available Text: Advance‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock	Original	128Mb: MT48H8M16LF MT48H4M32LF 09005aef82ea3742/Source: 09005aef82ea3752	PDF
MT48H4M32 Abstract: MT48H4M32LF 8M16 MT48H8M16LF 4M32 Compound Text: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration	Original	128Mb: MT48H8M16LF MT48H4M32LF 54-ball 90-ball 09005aef832ff1ea MT48H4M32 MT48H4M32LF 8M16 MT48H8M16LF 4M32 Compound	PDF
Untitled Abstract: No abstract text available Text: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • Vdd/Vddq = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock	Original	128Mb: MT48H8M16LF MT48H4M32LF 09005aef832ff1ea/Source: 09005aef832ff1ac	PDF
8M16 Abstract: MT48H4M32 Text: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration	Original	128Mb: MT48H8M16LF MT48H4M32LF 09005aef832ff1ea 8M16 MT48H4M32	PDF