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    8M16 Search Results

    8M16 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RJMG3018M162AER Amphenol Communications Solutions RJMG, Input output Connectors, 10G 1x1 with leds Visit Amphenol Communications Solutions
    RJMG2018M16A1EH Amphenol Communications Solutions RJMG, Input output Connectors, 1x1,1G,with LEDs Visit Amphenol Communications Solutions
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    8M16 Price and Stock

    Micron Technology Inc MT46H128M16LFDD-48-AIT:C-TR

    IC DRAM 2GBIT PAR 208MHZ 60VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT46H128M16LFDD-48-AIT:C-TR Cut Tape 2,440 1
    • 1 $14.99
    • 10 $13.876
    • 100 $11.8443
    • 1000 $11.26276
    • 10000 $11.26276
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    MT46H128M16LFDD-48-AIT:C-TR Reel 2,000 1,000
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    • 100 -
    • 1000 $10.50099
    • 10000 $10.50099
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    Alliance Memory Inc AS4C128M16D3LC-12BCN

    IC DRAM 2GBIT PARALLEL 96FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AS4C128M16D3LC-12BCN Tray 2,342 1
    • 1 $8.86
    • 10 $7.866
    • 100 $7.32175
    • 1000 $6.19714
    • 10000 $6.19714
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    Newark AS4C128M16D3LC-12BCN Bulk 198 1
    • 1 $5.06
    • 10 $5.06
    • 100 $5.06
    • 1000 $5.06
    • 10000 $5.06
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    Karl Kruse GmbH & Co KG AS4C128M16D3LC-12BCN 223,562
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    New Advantage Corporation AS4C128M16D3LC-12BCN 350 1
    • 1 -
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    • 1000 $8.34
    • 10000 $8.34
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    Micron Technology Inc MT41K128M16JT-107:K-TR

    IC DRAM 2GBIT PAR 96FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT41K128M16JT-107:K-TR Cut Tape 1,400 1
    • 1 $3.92
    • 10 $3.478
    • 100 $3.0882
    • 1000 $2.74036
    • 10000 $2.74036
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    MT41K128M16JT-107:K-TR Digi-Reel 1,400 1
    • 1 $3.92
    • 10 $3.478
    • 100 $3.0882
    • 1000 $2.74036
    • 10000 $2.74036
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    Micron Technology Inc MT41K128M16JT-125-AUT:K

    IC DRAM 2GBIT PARALLEL 96FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT41K128M16JT-125-AUT:K Bulk 1,116 1
    • 1 $7.24
    • 10 $6.428
    • 100 $5.7062
    • 1000 $5.06243
    • 10000 $5.06243
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    Cornell Dubilier Electronics Inc AFK158M16H32T-F

    CAP ALUM 1500UF 20% 16V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AFK158M16H32T-F Digi-Reel 331 1
    • 1 $2.78
    • 10 $1.812
    • 100 $1.2989
    • 1000 $1.2989
    • 10000 $1.2989
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    AFK158M16H32T-F Cut Tape 331 1
    • 1 $2.78
    • 10 $1.812
    • 100 $1.2989
    • 1000 $1.2989
    • 10000 $1.2989
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    AFK158M16H32T-F Reel 200 200
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    • 1000 $1.02521
    • 10000 $0.8789
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    TTI AFK158M16H32T-F Reel 200
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    • 1000 $1.03
    • 10000 $0.97
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    8M16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8M16

    Abstract: HSP061-8M16 18055 QFN-16L DSASW003741
    Text: HSP061-8M16 8-line ESD protection for high speed lines Features • ultralarge bandwidth: 6.3 GHz ■ ultralow capacitance: 0.6 pF ■ low time domain reflection ■ low leakage current: 100 nA at 25 °C ■ extended operating junction temperature range: -40 °C to 150 °C


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    PDF HSP061-8M16 QFN-16L 8M16 HSP061-8M16 18055 QFN-16L DSASW003741

    Untitled

    Abstract: No abstract text available
    Text: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C


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    PDF HSP061-8M16 QFN-16L

    Untitled

    Abstract: No abstract text available
    Text: HSP061-8M16 8-line ESD protection for high speed lines Datasheet - production data Applications The HSP061-8M16 is designed to protect against electrostatic discharge on sub micron technology circuits driving: • HDMI 1.3 and 1.4 • Digital Video Interface


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    PDF HSP061-8M16 HSP061-8M16 QFN-16L DocID18055

    Untitled

    Abstract: No abstract text available
    Text: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C


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    PDF HSP061-8M16 QFN-16L HSP061-8M16

    "flow meter"

    Abstract: No abstract text available
    Text: LL Roots Flow Meter Model LL Roots flow meter is a kind of volumetric instrument used to measure the volume flow of the fluid in enclosed pipes. It can provide on-site display of accumulated flow; when being coupled with photoelectron pulse converter and flow totalizer through transmission output


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    PDF LPJ-12D LPJ-12D/FI "flow meter"

    micron lpddr

    Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
    Text: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum 8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS


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    PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef835b8f7c 09005aef835b8e70 micron lpddr 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged

    256mb ddr333 200 pin

    Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks 8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


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    PDF 128Mb: DDR333 MT46V32M4 MT46V16M8 MT46V8M16 256Mb: 256mb ddr333 200 pin A11 MARKING CODE mark DM 8M16 DDR200 DDR266 MT46V16M8 MT46V32M4 MT46V8M16

    A11 MARKING CODE

    Abstract: MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks 8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant


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    PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-ball, 11x13 A11 MARKING CODE MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks 8M16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html


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    PDF 128Mb: PC100- PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 128MSDRAM

    s11 stopping compound

    Abstract: DEF01
    Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM 8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


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    PDF 128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 MEG X 4 X 4 BANKS MT46V16M8 – 4 MEG X 8 X 4 BANKS 8M16 – 2 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets


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    PDF 128Mb: 09005aef8074a655 128MBDDRx4x8x16

    MT48V

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb: x16, x32 MOBILE SDRAM SYNCHRONOUS DRAM 8M16LFFF, 8M16LFFF – 2 Meg x 16 x 4 banks MT48LC4M32LFFC , MT48V4M32LFFC – 1 Meg x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


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    PDF 128Mb: 096-cycle -40oC MT48LC8M16LFFF, MT48V8M16LFFF 90-pin, 54-ball, MT48V

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM 8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


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    PDF 128Mb: 096-cycle 09005aef80c97015

    FBGA 63

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 Banks MT46V16M8 – 4 Meg x 8 x 4 Banks 8M16 – 2 Meg x 16 x 4 Banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/sdram


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    PDF 128Mb: MT46V32M4 MT46V16M8 MT46V8M16 09005aef816fd013/Source: 09005aef816ce127 128MBDDRx4x8x16D FBGA 63

    SpecTek

    Abstract: S80016LK7TW-8A 8M16 54-PIN PC-100 54pin TSOP SDRAM PC133 registered reference design
    Text: 128Mb: x4, x8, x16 SDRAM 3.3V SYNCHRONOUS DRAM Features: • • • • • • • • • • • Intel PC-100 3-3-3 or PC133 (3-3-3) compatible Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be


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    PDF 128Mb: PC-100 PC133 096-cycle rankS80016LK7 S16008LK9 54-pin 60-ball PC100 SpecTek S80016LK7TW-8A 8M16 PC-100 54pin TSOP SDRAM PC133 registered reference design

    TOP SIDE MARKING OF MICRON

    Abstract: MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512
    Text: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM 8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES FBGA Top View • High-speed 300 MHz, 356 MHz, and 400 MHz


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    PDF 128Mb/144Mb: MT6V8M16 MT6V8M18 18-bit) MT6V8M18F-3B MT6V8M18F-3C MT6V8M18F-4C 144MRDRAM TOP SIDE MARKING OF MICRON MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb: x16, x32 BAT-RAM LOW POWER SDRAM SYNCHRONOUS DRAM 8M16LFFC, 8M16LFFC – 2 Meg x 16 x 4 banks 8M16LFFF, 8M16LFFF, MT48LC4M32LFFC , MT48V4M32LFFC – 1 Meg x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web


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    PDF 128Mb: 096-cycle -40oC MT48LC8M16LFFC, MT48V8M16LFFC MT48V8M16LFFC-8 MT48LC4M32LFFC-10 54-pin, 90-pin,

    09005aef8091e66d

    Abstract: MT48LC16M8A2BB
    Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks 8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive


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    PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d MT48LC16M8A2BB

    75Z MARKING

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks 8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


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    PDF 128Mb: DDR333 256Mb: 128Mx4x8x16DDR333 75Z MARKING

    BA 5053 circuit diagram

    Abstract: BA 5053
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks 8M16 – 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets


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    PDF 128Mb: 128Mx4x8x16DDR BA 5053 circuit diagram BA 5053

    MT46H8M16

    Abstract: 8M16 MT46H8M16LF
    Text: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM 8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • VDD/VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS


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    PDF 128Mb: MT46H8M16LF refresh08-368-3900 09005aef8199c1ec/Source: 09005aef81a19319 MT46H8M16LF MT46H8M16 8M16

    DSA0046601.txt

    Abstract: AS4C8M16
    Text: 8M16S FEBRUARY 2011 128Mb/ 8M x 16 bit Synchronous DRAM SDRAM Alliance Memory Confidential Features Table1. Key Specifications • • • • • • 8M16S tCK3 Clock Cycle time(min.) tAC3 Access time from CLK(max.) • • • • • • Fast access time from clock: 5/5.4 ns


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    PDF AS4C8M16S 128Mb/ 16-bit cycles/64ms 54-pin AS4C8M16S AS4C8M16S-6TCN AS4C8M16S-6TIN AS4C8M16S-7TCN DSA0046601.txt AS4C8M16

    MB81416-12

    Abstract: MB81416 mb81416-10 MB81416-15
    Text: FUJITSU „ lit, M B 81416-10 M ICROELECTRONICS. INC. M B 8M16-12 " HityQLCc. MB81416-15 16,384 WORD BY 4-BIT NMOS DYNAMIC RANDOM ACCESS MEMORY PRELIMINARY DESCRIPTION The Fujitsu MB81416 is a fu lly decoded, dynam ic NMOS random access memory organized as 16384 w ords by 4-bits. The de­


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    PDF MB81416-15 MB81416 18-pin MB81416-12 mb81416-10

    EE-19

    Abstract: 8M16 MT48LC16M8A2 MT48LC16M8A2TG-8E MT48LC32M4A2 MT48LC8M16A2 ck cl v2a
    Text: SYNCHRONOUS DRAM M T48LC 32M 4A 2- 8 Meg x 4 x 4 banks M T48LC 16M 8A 2- 4 Meg x 8 x 4 banks 8M16A2 -2 Meg x 16 x 4 banks For the latest data sheet, please re fe r to the M icron Web site: w w w ,m icron .com lm ti/m sp lhim lfd a tsshe ei.h im i FEATURES


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    PDF MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC66-, PC100- PC133-compliant 096-cycle 128Mb: 128MSDRAM EE-19 8M16 MT48LC16M8A2TG-8E ck cl v2a