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    SI4888DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4888DY 0-to-10V 09-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: 4 DRAWING THIS MADE IN THIRD DRAWING C ANGLE IS UNPUBLISHED. COPYRIGHT 3 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL LOC ,19 RIGHTS 2 <3> Ah RESERVED. D I 5T 50 REV I 5 IONS P F ZONE LTR J m DE5CRIPTION REV PER 0 G 3 A - 0 4 7 4 - 0 2


    OCR Scan     		PDF 0G3A-0474-02 09AUG02 29-N0V-95 /ws/dept2121/dwq2121/u 250-str

    Untitled

    Abstract: No abstract text available
    Text: @ TH I S DRAW ING I S U N P U B L I S H E D . V E R T R A U L I CHE U N V E R O E F F E N T L I C H T E Z E I CHNUNG BY TYCO E L E C T R O N I C S COPYRIGHT I 9 R E L E A S E D FOR P U B L I C A T I O N FREI FUER V E R O E F F E N T L I C H U N G C O R P O R A T I O N . A L L R I GHTS RE S E RV E D.


    OCR Scan     		PDF ECR-07-009741 09-Aug-02 25APR2007