SI9434BDY-T1-E3
Abstract: Si9434BDY-T1 Si9434BDY
Text: Si9434BDY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.3 0.055 @ VGS = −2.5 V −5.1 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9434BDY—E3 (Lead (Pb)-Free)
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Si9434BDY
Si9434BDY--E3
Si9434BDY-T1--E3
08-Apr-05
SI9434BDY-T1-E3
Si9434BDY-T1
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Si4874BDY
Abstract: SI4874BDY-E3
Text: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View
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Si4874BDY
Si4874BDY--E3
Si4874BDY-T1--E3
08-Apr-05
SI4874BDY-E3
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Untitled
Abstract: No abstract text available
Text: SFH615AGB-E3 Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-emitter Voltage, VCEO = 70 V • Low Saturation Voltage
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SFH615AGB-E3
2002/95/EC
2002/96/EC
i179060
08-Apr-05
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1PM6
Abstract: pm6 11
Text: VISHAY PM6 OVG Vishay Semiconductors PM6 (OVG) Package Dimensions in mm 19010 Document Number 82339 Rev. 1.1, 09-Aug-04 www.vishay.com 1 PM6 (OVG) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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09-Aug-04
D-74025
1PM6
pm6 11
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SUM110N04-2M3L-E3
Abstract: No abstract text available
Text: SUM110N04-2m3L New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0023 @ VGS = 10 V 40 0.003 @ VGS = 4.5 V ID (A) 110 a D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Automotive Such As
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SUM110N04-2m3L
O-263
SUM110N04-2m3L--E3
S-41503--Rev.
09-Aug-04
SUM110N04-2M3L-E3
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Program13
Abstract: an1171 CHN 950 AN1153 TIMEX ADSP-21062 ts101 dsp application note ADSP-21535 ADSP-2188M ADSP-TS101S
Text: DSM2150F5V DSM Digital Signal Processor System Memory for Analog Devices DSPs (3.3V Supply) FEATURES SUMMARY • ■ ■ ■ ■ ■ Glueless Connection to DSP – Easily add memory, logic, and I/O to the External Port of ADSP-218x, 219x, 2106x, 2116x, 2153x, and TS101 families of
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DSM2150F5V
ADSP-218x,
2106x,
2116x,
2153x,
TS101
16-bit
Program13
an1171
CHN 950
AN1153
TIMEX
ADSP-21062
ts101 dsp application note
ADSP-21535
ADSP-2188M
ADSP-TS101S
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Si4511DY
Abstract: Si4511DY-T1 41496
Text: Si4511DY Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.0145 @ VGS = 10 V 9.6 0.017 @ VGS = 4.5 V 8.6 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V
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Si4511DY
Si4511DY-T1
Si4511DY--E3
Si4511DY-T1--E3
S-41496--Rev.
09-Aug-04
41496
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Untitled
Abstract: No abstract text available
Text: DG3015 Vishay Siliconix New Product Low-Voltage, Low rON, Dual DPDT Analog Switch FEATURES BENEFITS Low Voltage Operation 2.7 V to 3.3 V Low On-Resistance - rON: 0.80 W 3 dB Loss @ 100 MHz Fast Switching: tON = 40 ns tOFF = 35 ns D MICRO FOOTr Package D
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DG3015
DG3015
S-41489--Rev.
09-Aug-04
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S-41504
Abstract: SUP90N06-05L dt 420
Text: SUP90N06-05L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) FEATURES rDS(on) (W) 0.0049 @ VGS = 10 V 60 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) 90 a 0.0055 @ VGS = 4.5 V APPLICATIONS
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SUP90N06-05L
O-220AB
SUP90N06-05L--E3
08-Apr-05
S-41504
SUP90N06-05L
dt 420
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SFH615AGB
Abstract: No abstract text available
Text: SFH615AGB-E3 Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-emitter Voltage, VCEO = 70 V • Low Saturation Voltage
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SFH615AGB-E3
i179060
2002/95/EC
2002/96/EC
18-Jul-08
SFH615AGB
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61400416121
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: WHITE CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS Ni PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C
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UL94-V0
05-DEC-07
13-APR-07
10-NOV-06ERATURE:
10-NOV-06
09-AUG-04
30-MAY-03
61400416121
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Untitled
Abstract: No abstract text available
Text: Si4511DY Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.0145 @ VGS = 10 V 9.6 0.017 @ VGS = 4.5 V 8.6 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V
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Si4511DY
Si4511DY-T1
Si4511DY--E3
Si4511DY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SFH620AGB-E3 Vishay Semiconductors Optocoupler, AC Input, 5300 VRMS Features • • • • • • • • • High Current Transfer Ratios at 5 mA: 50-600 % at 1.0 mA: 45 % typical > 13 Low CTR Degradation Good CTR Linearity Depending on Forward Current
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SFH620AGB-E3
i179062
2002/95/EC
2002/96/EC
08-Apr-05
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Si4874BDY
Abstract: No abstract text available
Text: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View
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Si4874BDY
Si4874BDY--E3
Si4874BDY-T1--E3
S-41508--Rev.
09-Aug-04
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S-41502-Rev
Abstract: No abstract text available
Text: SUM110N06-3m4L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0034 @ VGS = 10 V 60 D TrenchFETr Power MOSFETS D 100% Rg Tested ID (A) APPLICATIONS 110 a 0.0041 @ VGS = 4.5 V D Automotive Such As
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SUM110N06-3m4L
O-263
SUM110N06-3m4L--E3
08-Apr-05
S-41502-Rev
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Untitled
Abstract: No abstract text available
Text: VISHAY PM6 OGV Vishay Semiconductors PM6 (OGV) Package Dimensions in mm 19009 Document Number 82338 Rev. 1.1, 09-Aug-04 www.vishay.com 1 PM6 (OGV) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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09-Aug-04
D-74025
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Untitled
Abstract: No abstract text available
Text: PM1LL VISHAY Vishay Semiconductors PM1LL Package Dimensions in mm 96 12117 Document Number 82337 Rev. 1.1, 09-Aug-04 www.vishay.com 1 PM1LL VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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09-Aug-04
D-74025
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Untitled
Abstract: No abstract text available
Text: PM1VV1 VISHAY Vishay Semiconductors PM1VV1 Package Dimensions in mm 13651 Document Number 82336 Rev. 1.1, 09-Aug-04 www.vishay.com 1 PM1VV1 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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09-Aug-04
D-74025
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IEC60965
Abstract: No abstract text available
Text: SFH620AGB-E3 Vishay Semiconductors Optocoupler, AC Input, 5300 VRMS Features • • • • • • • • • High Current Transfer Ratios at 5 mA: 50-600 % at 1.0 mA: 45 % typical > 13 Low CTR Degradation Good CTR Linearity Depending on Forward Current
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SFH620AGB-E3
i179062
2002/95/EC
2002/96/EC
18-Jul-08
IEC60965
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73037 S-41504
Abstract: SUP90N06-05L
Text: SUP90N06-05L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) FEATURES rDS(on) (W) 0.0049 @ VGS = 10 V 60 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) 90 a 0.0055 @ VGS = 4.5 V APPLICATIONS
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SUP90N06-05L
O-220AB
SUP90N06-05L--E3
18-Jul-08
73037 S-41504
SUP90N06-05L
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Untitled
Abstract: No abstract text available
Text: DG3015 Vishay Siliconix New Product Low-Voltage, Low rON, Dual DPDT Analog Switch FEATURES BENEFITS Low Voltage Operation 2.7 V to 3.3 V Low On-Resistance - rON: 0.80 W 3 dB Loss @ 100 MHz Fast Switching: tON = 40 ns tOFF = 35 ns D MICRO FOOTr Package D
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DG3015
DG3015
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4816BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 6.8 FEATURES Qg (Typ) D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested
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Si4816BDY
Si4816BDY--E3
Si4816BDY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS LTR DESCRIPTION DATE REV PER 0G 3A— 0 4 1 9 — 0 4 DWN APVD JR PD 09AUG04 D D 1 CONTINUOUS 2 A C C EP T S
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09AUG04
31MAR2000
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spec RG-316
Abstract: RG-196
Text: 4 THIS DRAWING IS UNPUBLISHED. 3 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. COPYRIGHT DIST REVISIONS AJ BY TYCO ELECTRONICS CORPORATION. LTR DATE DWN APVD 09AUG04 KW KW DESCRIPTION REV PER 0 S 1 4 - 0 3 3 2 - 0 4 - D D 1. ITEMS 1, 2, 3, AND 4 PACKAGED UNASSEMBLED
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0S14-0332-04
09AUG04
19NOV2001
220CT00
RD-316
spec RG-316
RG-196
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